ZHCSQU0C November 1998 – July 2022 CD54HC640 , CD54HCT640 , CD74HC640 , CD74HCT640
PRODUCTION DATA
PARAMETER | TEST CONDITIONS(1) | VCC (V) | 25°C | -40°C to 85°C | -55°C to 125°C | UNIT | |||||
---|---|---|---|---|---|---|---|---|---|---|---|
MIN | TYP | MAX | MIN | MAX | MIN | MAX | |||||
HC TYPES | |||||||||||
VIH | High-level input voltage | 2 | 1.5 | 1.5 | 1.5 | V | |||||
4.5 | 3.15 | 3.15 | 3.15 | V | |||||||
6 | 4.2 | 4.2 | 4.2 | V | |||||||
VIL | Low-level input voltage | 2 | 0.5 | 0.5 | 0.5 | V | |||||
4.5 | 1.35 | 1.35 | 1.35 | V | |||||||
6 | 1.8 | 1.8 | 1.8 | V | |||||||
VOH | High-level output voltage CMOS loads |
IOH = – 20 µA | 2 | 1.9 | 1.9 | 1.9 | V | ||||
IOH = – 20 µA | 4.5 | 4.4 | 4.4 | 4.4 | V | ||||||
IOH = – 20 µA | 6 | 5.9 | 5.9 | 5.9 | V | ||||||
High-level output voltage TTL loads |
IOH= – 6 mA | 4.5 | 3.98 | 3.84 | 3.7 | V | |||||
IOH = – 7.8 mA | 6 | 5.48 | 5.34 | 5.2 | V | ||||||
VOL | Low-level output voltage CMOS loads |
IOL = 20 µA | 2 | 0.1 | 0.1 | 0.1 | V | ||||
IOL = 20 µA | 4.5 | 0.1 | 0.1 | 0.1 | V | ||||||
IOL = 20 µA | 6 | 0.1 | 0.1 | 0.1 | V | ||||||
Low-level output voltage TTL loads |
IOL= 6 mA | 4.5 | 0.26 | 0.33 | 0.4 | V | |||||
IOL = 7.8 mA | 6 | 0.26 | 0.33 | 0.4 | V | ||||||
II | Input leakage current | VI = VCC or GND | 6 | ±0.1 | ±1 | ±1 | µA | ||||
ICC | Quiescent device current | VI = VCC or GND | 6 | 8 | 80 | 160 | µA | ||||
IOZ | Three-state leakage current | VO = VCC or GND | 6 | ±0.5 | ±5 | ±10 | µA | ||||
HCT TYPES | |||||||||||
VIH | High-level input voltage | 4.5 to 5.5 | 2 | 2 | 2 | V | |||||
VIL | Low-level input voltage | 4.5 to 5.5 | 0.8 | 0.8 | 0.8 | V | |||||
VOH | High-level
output voltage CMOS loads |
VOH = – 20 µA | 4.5 | 4.4 | 4.4 | 4.4 | V | ||||
High-level
output voltage TTL loads |
VOH = – 6 mA | 4.5 | 3.98 | 3.84 | 3.7 | V | |||||
VOL | Low-level
output voltage CMOS loads |
VOL = 20 µA | 4.5 | 0.1 | 0.1 | 0.1 | V | ||||
Low-level
output voltage TTL |
VOL = 6 mA | 4.5 | 0.26 | 0.33 | 0.4 | V | |||||
II | Input leakage current | VI = VCC or GND | 5.5 | ±0.1 | ±1 | ±1 | µA | ||||
ICC | Quiescent device current | VI = VCC or GND | 5.5 | 8 | 80 | 160 | µA | ||||
IOZ | Three-state leakage current | VO = VCC or GND | 5.5 | ±0.5 | ±5 | ±10 | |||||
∆ICC(1) | Additional quiescent device current per input pin | DIR input held at VCC – 2.1 | 4.5 to 5.5 | 100 | 324 | 405 | 441 | µA | |||
OE and A inputs held at vCC – 2.1 | 4.5 to 5.5 | 100 | 540 | 675 | 735 | ||||||
B input held at VCC – 2.1 | 4.5 to 5.5 | 100 | 540 | 675 | 735 |