SCAS881C August   2009  – January 2016 CDCLVP2102

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: LVCMOS Input, at VCC = 2.375 V to 3.6 V
    6. 6.6  Electrical Characteristics: Differential Input, at VCC = 2.375 V to 3.6 V
    7. 6.7  Electrical Characteristics: LVPECL Output, at VCC = 2.375 V to 2.625 V
    8. 6.8  Electrical Characteristics: LVPECL Output, at VCC = 3 V to 3.6 V
    9. 6.9  Timing Requirements, at VCC = 2.375 V to 2.625 V
    10. 6.10 Timing Requirements, at VCC = 3 V to 3.6 V
    11. 6.11 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Test Configurations
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 LVPECL Output Termination
      2. 8.4.2 Input Termination
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage(2) –0.5 4.6 V
VIN Input voltage(3) –0.5 VCC + 0.5 V
VOUT Output voltage(3) –0.5 VCC + 0.5 V
IIN Input current 20 mA
IOUT Output current 50 mA
TA Specified free-air temperature (no airflow) –40 85 °C
TJ Maximum junction temperature 125 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All supply voltages must be supplied simultaneously.
(3) The input and output negative voltage ratings may be exceeded if the input clamp-current and output clamp-current ratings are observed.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) 2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) 1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCC Supply voltage 2.375 2.5/3.3 3.60 V
TA Ambient temperature –40 85 °C
TPCB PCB temperature (measured at thermal pad) 105 °C

6.4 Thermal Information

THERMAL METRIC(1)(2)(3) CDCLVP2102 UNIT
RGT (VQFN)
16 PINS
RθJA Junction-to-ambient thermal resistance (0 LFM) 51.8(4) °C/W
RθJC(top) Junction-to-case (top) thermal resistance 79 °C/W
RθJP(5) Junction-to-pad thermal resistance 6.12(4) °C/W
ψJT Junction-to-top characterization parameter 1.4 °C/W
ψJB Junction-to-board characterization parameter 19 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 6.12 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953).
(2) The package thermal resistance is calculated in accordance with JESD 51 and JEDEC 2S2P (high-K board).
(3) Connected to GND with four thermal vias (0.3-mm diameter).
(4) 2 × 2 vias on pad
(5) RθJP (junction-to-pad) is used for the VQFN package, because the primary heat flow is from the junction to the GND pad of the VQFN package.

6.5 Electrical Characteristics: LVCMOS Input, at VCC = 2.375 V to 3.6 V

at TA = –40°C to +85°C and TPCB ≤ 105°C (unless otherwise noted) (1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fIN Input frequency 200 MHz
Vth Input threshold voltage External threshold voltage applied to complementary input 1.1 1.8 V
VIH Input high voltage Vth + 0.1 VCC V
VIL Input low voltage 0 Vth – 0.1 V
IIH Input high current VCC = 3.6 V, VIH = 3.6 V 40 μA
IIL Input low current VCC = 3.6 V, VIL = 0 V –40 μA
ΔV/ΔT Input edge rate 20% to 80% 1.5 V/ns
ICAP Input capacitance 5 pF
(1) Figure 5 and Figure 6 show DC test setup.

6.6 Electrical Characteristics: Differential Input, at VCC = 2.375 V to 3.6 V

at TA = –40°C to +85°C and TPCB ≤ 105°C (unless otherwise noted) (1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fIN Input frequency Clock input 2000 MHz
VIN, DIFF, PP Differential input peak-peak voltage fIN ≤ 1.5 GHz 0.1 1.5 V
1.5 GHz ≤ fIN ≤ 2 GHz 0.2 1.5 V
VICM Input common-mode level 1 VCC – 0.3 V
IIH Input high current VCC = 3.6 V, VIH = 3.6 V 40 μA
IIL Input low current VCC = 3.6 V, VIL = 0 V –40 μA
ΔV/ΔT Input edge rate 20% to 80% 1.5 V/ns
ICAP Input capacitance 5 pF
(1) Figure 7 and Figure 8 show DC test setup. Figure 9 shows AC test setup.

6.7 Electrical Characteristics: LVPECL Output, at VCC = 2.375 V to 2.625 V

at TA = –40°C to +85°C and TPCB ≤ 105°C (unless otherwise noted) (1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH Output high voltage TA = –40°C to 85°C VCC – 1.26 VCC – 0.9 V
TPCB ≤ 105°C VCC – 1.26 = VCC – 0.83
VOL Output low voltage TA = –40°C to 85°C VCC – 1.7 VCC – 1.3 V
TPCB ≤ 105°C VCC – 1.7 VCC – 1.25
VOUT, DIFF, PP Differential output peak-peak voltage fIN ≤ 2 GHz 0.5 1.35 V
VAC_REF Input bias voltage(2) IAC_REF = 2 mA VCC – 1.6 VCC – 1.1 V
IEE Supply internal current Outputs unterminated,
TA ≤ 85°C		 48 mA
Outputs unterminated,
TPCB ≤ 105°C		 49
ICC Output and internal supply current All outputs terminated, 50 Ω to VCC – 2
TA ≤ 85°C		 173 mA
All outputs terminated, 50 Ω to VCC – 2
TPCB ≤ 105°C		 189
(1) Figure 10 and Figure 11 show DC and AC test setup.
(2) Internally generated bias voltage (VAC_REF) is for 3.3-V operation only. TI recommends applying externally generated bias voltage for VCC < 3 V.

6.8 Electrical Characteristics: LVPECL Output, at VCC = 3 V to 3.6 V

at TA = –40°C to +85°C and TPCB ≤ 105°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH Output high voltage TA ≤ 85°C VCC – 1.26 VCC – 0.9 V
TPCB ≤ 105°C VCC – 1.26 VCC – 0.85
VOL Output low voltage TA ≤ 85°C VCC – 1.7 VCC – 1.3 V
TPCB ≤ 105°C VCC – 1.7 VCC – 1.3
VOUT, DIFF, PP Differential output peak-peak voltage fIN ≤ 2 GHz 0.65 1.35 V
VAC_REF Input bias voltage IAC_REF = 2 mA VCC – 1.6 VCC – 1.1 V
IEE Supply internal current Outputs unterminated,
TA ≤ 85°C		 48 mA
Outputs unterminated,
TPCB ≤ 105°C		 49
ICC Output and internal supply current All outputs terminated, 50 Ω to VCC – 2
TA ≤ 85°C		 173 mA
All outputs terminated, 50 Ω to VCC – 2
TPCB ≤ 105°C		 189
(1) Figure 10 and Figure 11 show DC and AC test setup.
(2) 100-MHz Wenzel oscillator, Input slew rate = 0.9 V/ns (single-ended)
(3) 100-MHz Wenzel oscillator, Input slew rate = 3.4 V/ns (differential)
(4) 122.88-MHz Rohde & Schwarz SMA100A, Input slew rate = 3.7 V/ns (differential)
(5) 156.25-MHz Crystek CPRO33 oscillator, Input slew rate = 2.9 V/ns (differential)
(6) 312.5-MHz Rohde & Schwarz SMA100A, Input slew rate = 4 V/ns (differential)

6.9 Timing Requirements, at VCC = 2.375 V to 2.625 V

Refer to Figure 1 and Figure 2.
MIN NOM MAX UNIT
tPD Propagation delay VIN, DIFF, PP = 0.1 V 450 ps
VIN, DIFF, PP = 0.3 V 450
tSK,PP Part-to-part skew 100 ps
tSK,O_WB Within bank output skew 10 ps
tSK,O_BB Bank-to-bank output skew Both inputs have equal skew 15 ps
tSK,P Pulse skew (with 50% duty cycle input) Crossing-point-to-crossing-point distortion, fOUT = 100 MHz –50 50 ps
tRJIT Random additive jitter (with 50% duty cycle input) fOUT = 100 MHz, VIN,SE = VCC,
Vth = 1.25 V, 10 kHz to 20 MHz		 0.089 ps, RMS
fOUT = 100 MHz, VIN,SE = 0.9 V,
Vth = 1.1 V, 10 kHz to 20 MHz		 0.093 ps, RMS
fOUT = 2 GHz, VIN,DIFF,PP = 0.2 V,
VICM = 1 V, 10 kHz to 20 MHz		 0.037 ps, RMS
fOUT = 100 MHz, VIN,DIFF,PP = 0.15 V,
VICM = 1 V, 10 kHz to 20 MHz		 0.094 ps, RMS
fOUT = 100 MHz, VIN,DIFF,PP = 1 V,
VICM = 1 V, 10 kHz to 20 MHz		 0.091 ps, RMS
fOUT,8 = 500 MHz, VIN,DIFF,PP,0 = 0.15 V,
VICM, 0 = 1 V, fOUT, 7 = 62.5 MHz,
VIN,SE,1 = VCC, Vth, 1 = VCC/2		 –52.5 dBc
PSPUR Coupling on differential OUT8 from OUT7 in the frequency spectrum
of fOUT, 8 ±(fOUT, 8/2) with
synchronous inputs		 fOUT,8 = 500 MHz, VIN,DIFF,PP,0 = 0.15 V,
VICM, 0 = 1 V, fOUT, 7 = 62.5 MHz,
VIN,DIFF,PP,1 = 1 V, VICM, 1 = 1 V		 –66.8 dBc
fOUT,8 = 500 MHz, VIN,DIFF,PP,0 = 0.15 V,
VICM, 0 = 1 V, fOUT, 7 = 15.625 MHz,
VIN,SE,1 = VCC, Vth, 1 = VCC/2		 –52
fOUT,8 = 500 MHz, VIN,DIFF,PP,0 = 0.15 V,
VICM, 0 = 1 V, fOUT, 7 = 15.625 MHz,
VIN,DIFF,PP,1 = 1 V, VICM, 1 = 1 V		 –66.4
tR/tF Output rise/fall time 20% to 80% 200 ps

6.10 Timing Requirements, at VCC = 3 V to 3.6 V

Refer to Figure 1 and Figure 2.
MIN NOM MAX UNIT
tPD Propagation delay VIN, DIFF, PP = 0.1 V 450 ps
VIN, DIFF, PP = 0.3 V 450
tSK,PP Part-to-part skew 100 ps
tSK,O_WB Within bank output skew 10 ps
tSK,O_BB Bank-to-bank output skew Both inputs have equal skew 15 ps
tSK,P Pulse skew (with 50% duty cycle input) Crossing-point-to-crossing-point distortion, fOUT = 100 MHz –50 50 ps
tRJIT Random additive jitter (with 50% duty cycle input) fOUT = 100 MHz,(2) VIN,SE = VCC,
Vth = 1.65 V, 10 kHz to 20 MHz		 0.081 ps, RMS
fOUT = 100 MHz,(2) VIN,SE = 0.9 V,
Vth = 1.1 V, 10 kHz to 20 MHz		 0.097 ps, RMS
fOUT = 2 GHz, VIN,DIFF,PP = 0.2 V,
VICM = 1 V, 10 kHz to 20 MHz		 0.05 ps, RMS
fOUT = 100 MHz,(2) VIN,DIFF,PP = 0.15 V,
VICM = 1 V, 10 kHz to 20 MHz		 0.098 ps, RMS
fOUT = 100 MHz,(2) VIN,DIFF,PP = 1 V,
VICM = 1 V, 10 kHz to 20 MHz		 0.095 ps, RMS
fOUT,8 = 500 MHz, VIN,DIFF,PP,0 = 0.15 V,
VICM, 0 = 1 V, fOUT, 7 = 62.5 MHz,
VIN,SE,1 = VCC, Vth, 1 = VCC/2		 –55.3 dBc
fOUT = 100 MHz(3), Input AC-coupled,
VICM = VAC_REF, 12 kHz to 20 MHz 		0.068 ps, RMS
fOUT = 122.88 MHz(4), Input AC-coupled,
VICM = VAC_REF, 12 kHz to 20 MHz 		0.056 ps, RMS
fOUT = 156.25 MHz(5), Input AC-coupled,
VICM = VAC_REF, 12 kHz to 20 MHz 		0.047 ps, RMS
fOUT = 312.5 MHz(6), Input AC-coupled,
VICM = VAC_REF, 12 kHz to 20 MHz 		0.026 ps, RMS
PSPUR Coupling on differential OUT8 from OUT7 in the frequency spectrum
of fOUT, 8 ±(fOUT, 8/2) with
synchronous inputs		 fOUT,8 = 500 MHz, VIN,DIFF,PP,0 = 0.15 V,
VICM, 0 = 1 V, fOUT, 7 = 62.5 MHz,
VIN,SIFF,PP,1 = 1 V, VICM, 1 = 1 V		 –65.1 dBc
fOUT,8 = 500 MHz, VIN,DIFF,PP,0 = 0.15 V,
VICM, 0 = 1 V, fOUT, 7 = 15.625 MHz,
VIN,SE,1 = VCC, Vth, 1 = VCC/2		 –54.7
fOUT,8 = 500 MHz, VIN,DIFF,PP,0 = 0.15 V,
VICM, 0 = 1 V, fOUT, 7 = 15.625 MHz,
VIN,DIFF,PP,1 = 1 V, VICM, 1 = 1 V		 –66.7
tR/tF Output rise/fall time 20% to 80% 200 ps

Figure 1 shows the output voltage and rise/fall time. Output and part-to-part skew are shown in Figure 2.

CDCLVP2102 ai_vo_tr_tf_cas881.gif Figure 1. Output Voltage and Rise/Fall Time
CDCLVP2102 ai_vo_skew_cas881.gif
1. Output skew is calculated as the greater of the following: As the difference between the fastest and the slowest tPLHn (n = 0, 1, 2, 3), or as the difference between the fastest and the slowest tPHLn (n = 0, 1, 2, 3).
2. Part-to-part skew is calculated as the greater of the following: As the difference between the fastest and the slowest tPLHn (n = 0, 1, 2, 3) across multiple devices, or the difference between the fastest and the slowest tPHLn (n = 0, 1, 2, 3) across multiple devices.
Figure 2. Output and Part-to-Part Skew

6.11 Typical Characteristics

at TA = –40°C to +85°C (unless otherwise noted)
CDCLVP2102 tc_fqcy_diff_vout_swing01_cas881.gif Figure 3. Differential Output Peak-to-Peak Voltage vs Frequency
CDCLVP2102 tc_fqcy_diff_vout_swing02_cas881.gif Figure 4. Differential Output Peak-to-Peak Voltage vs Frequency
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