米6体育平台手机版

ZHCSDH5 March 2015 CSD13302W

PRODUCTION DATA.

5 Specifications

(T_A = 25°C)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 , I_D = 250 μA	12			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 9.6 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = 10 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	0.7	1.0	1.3	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 2.5 V, I_D = 1 A		21.2	25.8	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5 V, I_D = 1 A		14.6	17.1	mΩ
g_ƒs	Transconductance	V_DS = 1.2 V, I_D = 1 A		10		S
DYNAMIC CHARACTERISTICS
C_ISS	Input Capacitance	V_GS = 0 V, V_DS = 6 V, ƒ = 1 MHz		663	862	pF
C_OSS	Output Capacitance			211	274	pF
C_RSS	Reverse Transfer Capacitance			151	196	pF
R_g	Series Gate Resistance			3.6	7.2	Ω
Q_g	Gate Charge Total (4.5 V)	V_DS = 6 V, I_D = 1 A		6.0	7.8	nC
Q_gd	Gate Charge Gate-to-Drain			2.1		nC
Q_gs	Gate Charge Gate-to-Source			0.7		nC
Q_g(th)	Gate Charge at Vth			0.7		nC
Q_OSS	Output Charge	V_DS = 6 V, V_GS = 0 V		1.3		nC
t_d(on)	Turn On Delay Time	V_DS = 6 V, V_GS = 4.5 V, I_D = 1 A R_G = 0 Ω		6		ns
t_r	Rise Time			7		ns
t_d(off)	Turn Off Delay Time			17		ns
t_ƒ	Fall Time			7		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_S = 1 A, V_GS = 0 V		0.7	1.0	V
Q_rr	Reverse Recovery Charge	V_DS= 6 V, I_S = 1 A, di/dt = 200 A/μs		11.6		nC
t_rr	Reverse Recovery Time	V_DS= 6 V, I_S = 1 A, di/dt = 200 A/μs		19.6		ns

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJA	Junction-to-Ambient Thermal Resistance⁽¹⁾		275		°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽²⁾		70		°C/W

(1) Device mounted on FR4 material with minimum Cu mounting area.

(2) Device mounted on FR4 material with 1 inch² (6.45 cm²), 2 oz. (0.071 mm thick) Cu.

Typical R_θJA = 70°C/W when mounted on
1 inch² of 2 oz. Cu.

Typical R_θJA = 275°C/W when mounted on minimum pad area of 2 oz. Cu.

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

I_D = 1 A	V_DS = 6 V

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 1 A

Figure 8. Normalized On-State Resistance vs Temperature

	Single Pulse, Max R_θJA = 275°C/W

Figure 10. Maximum Safe Operating Area

	V_DS = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Maximum Drain Current vs Temperature