米6体育平台手机版

ZHCSFM0A October 2016 – February 2022 CSD13380F3

PRODUCTION DATA

5.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise stated)

Figure 5-1 Transient Thermal Impedance

	V_DS = 5 V

Figure 5-3 Transfer Characteristics

Figure 5-2 Saturation Characteristics

	V_DS = 6 V	I_D = 0.4 A

Figure 5-4 Gate Charge

	I_D = 250 µA

Figure 5-6 Threshold Voltage vs Temperature

	I_D = 0.4A

Figure 5-8 Normalized On-State Resistance vs Temperature

	Single pulse, typical R_θJA = 255°C/W (min Cu)

Figure 5-10 Maximum Safe Operating Area

	Typical R_θJA = 255°C/W (min Cu)

Figure 5-12 Maximum Drain Current vs Temperature

Figure 5-5 Capacitance

Figure 5-7 On-State Resistance vs Gate-to-Source Voltage

Figure 5-9 Typical Diode Forward Voltage

Figure 5-11 Single Pulse Unclamped Inductive Switching