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ZHCSFM0A October 2016 – February 2022 CSD13380F3

PRODUCTION DATA

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_DS = 250 μA	12			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 9.6 V			50	nA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 8 V			25	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_DS = 250 μA	0.55	0.85	1.30	V
R_DS(on)	Drain-to-source on resistance	V_GS = 1.8 V, I_DS = 0.1 A		96	135	mΩ
		V_GS = 2.5 V, I_DS = 0.4 A		73	92
		V_GS = 4.5 V, I_DS = 0.4 A		63	76
g_fs	Transconductance	V_DS = 1.2 V, I_DS = 0.4 A		4.3		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 6 V, ƒ = 1 MHz		120	156	pF
C_oss	Output capacitance			81	105	pF
C_rss	Reverse transfer capacitance			9.6	12.5	pF
R_G	Series gate resistance			16		Ω
Q_g	Gate charge total (4.5 V)	V_DS = 6 V, I_DS = 0.4 A		0.91	1.2	nC
Q_gd	Gate charge gate-to-drain			0.15		nC
Q_gs	Gate charge gate-to-source			0.19		nC
Q_g(th)	Gate charge at V_th			0.15		nC
Q_oss	Output charge	V_DS = 6 V, V_GS = 0 V		0.81		nC
t_d(on)	Turnon delay time	V_DS = 6 V, V_GS = 4.5 V, I_DS = 0.4 A, R_G = 2 Ω		4		ns
t_r	Rise time			4		ns
t_d(off)	Turnoff delay time			11		ns
t_f	Fall time			3		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 0.4 A, V_GS = 0 V		0.71	1	V
Q_rr	Reverse recovery charge	V_DS= 6 V, I_F = 0.4 A, di/dt = 100 A/μs		2.1		nC
t_rr	Reverse recovery time	V_DS= 6 V, I_F = 0.4 A, di/dt = 100 A/μs		8		ns