ZHCSBB0F July 2013 – January 2022 CSD13381F4
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-Source Voltage | VGS = 0 V, IDS = 250 μA | 12 | V | |||
| IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = 9.6 V | 100 | nA | |||
| IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = 8 V | 50 | nA | |||
| VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, IDS = 250 μA | 0.65 | 0.85 | 1.10 | V | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = 1.8 V, IDS = 0.5 A | 310 | 400 | mΩ | ||
| VGS = 2.5 V, IDS = 0.5 A | 170 | 225 | mΩ | ||||
| VGS = 4.5 V, IDS = 0.5 A | 140 | 180 | mΩ | ||||
| gƒs | Transconductance | VDS = 6 V, IDS = 0.5 A | 3.2 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input Capacitance | VGS = 0 V, VDS = 6 V, ƒ = 1 MHz | 155 | 200 | pF | ||
| Coss | Output Capacitance | 47 | 62 | pF | |||
| Crss | Reverse Transfer Capacitance | 2.5 | 3.3 | pF | |||
| RG | Series Gate Resistance | 23 | Ω | ||||
| Qg | Gate Charge Total (4.5 V) | VDS = 6 V, IDS = 0.5 A | 1060 | 1400 | pC | ||
| Qgd | Gate Charge Gate-to-Drain | 140 | pC | ||||
| Qgs | Gate Charge Gate-to-Source | 230 | pC | ||||
| Qg(th) | Gate Charge at Vth | 155 | pC | ||||
| Qoss | Output Charge | VDS = 6 V, VGS = 0 V | 1120 | pC | |||
| td(on) | Turn On Delay Time | VDS = 6 V, VGS = 4.5 V, IDS = 0.5 A, RG = 2 Ω | 3.7 | ns | |||
| tr | Rise Time | 1.5 | ns | ||||
| td(off) | Turn Off Delay Time | 11.0 | ns | ||||
| tƒ | Fall Time | 3.8 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode Forward Voltage | ISD = 0.5 A, VGS = 0 V | 0.73 | 0.9 | V | ||
| Qrr | Reverse Recovery Charge | VDS= 6 V, IF = 0.5 A, di/dt = 300 A/μs | 1550 | pC | |||
| trr | Reverse Recovery Time | 6 | ns | ||||