米6体育平台手机版

ZHCSFM3B October 2016 – February 2022 CSD13385F5

PRODUCTION DATA

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_DS = 250 μA	12			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 9.6 V			50	nA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 8 V			25	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_DS = 250 μA	0.5	0.8	1.2	V
R_DS(on)	Drain-to-source on resistance	V_GS = 1.8 V, I_DS = 0.1 A		26	50	mΩ
		V_GS = 2.5 V, I_DS = 0.9 A		18	23
		V_GS = 4.5 V, I_DS = 0.9 A		15	19
g_fs	Transconductance	V_DS = 1.2 V, I_DS = 0.9 A		11.3		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 6 V, ƒ = 1 MHz		519	674	pF
C_oss	Output capacitance			305	396	pF
C_rss	Reverse transfer capacitance			29	38	pF
R_G	Series gate resistance			20		Ω
Q_g	Gate charge total (4.5 V)	V_DS = 6 V, I_DS = 0.9 A		3.9	5.0	nC
Q_gd	Gate charge gate-to-drain			0.39		nC
Q_gs	Gate charge gate-to-source			0.74		nC
Q_g(th)	Gate charge at V_th			0.46		nC
Q_oss	Output charge	V_DS = 6 V, V_GS = 0 V		2.5		nC
t_d(on)	Turnon delay time	V_DS = 6 V, V_GS = 4.5 V, I_DS = 0.9 A, R_G = 2 Ω		7		ns
t_r	Rise time			10		ns
t_d(off)	Turnoff delay time			33		ns
t_f	Fall time			10		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 0.9 A, V_GS = 0 V		0.67	1.0	V