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SLPS235E October 2009 – November 2024 CSD16301Q2

PRODUCTION DATA

4.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise specified)

Figure 4-1 Transient Thermal Impedance

Figure 4-2 Saturation Characteristics

I_D = 4A

V_DS = 50V

Figure 4-4 Gate Charge

I_D = 250µA

Figure 4-6 Threshold Voltage vs Temperature

V_GS = 4.5V

I_D = 4A

Figure 4-8 Normalized On-State Resistance vs Temperature

Single pulse, max R_θJC = 8.4°C/W

Figure 4-10 Maximum Safe Operating Area

Figure 4-12 Maximum Drain Current vs Temperature

V_DS = 5V

Figure 4-3 Transfer Characteristics

Figure 4-5 Capacitance

Figure 4-7 On-State Resistance vs Gate-to-Source Voltage

Figure 4-9 Typical Diode Forward Voltage

Figure 4-11 Single Pulse Unclamped Inductive Switching