SLPS235E October 2009 – November 2024 CSD16301Q2
PRODUCTION DATA
3 Description
This 25V, 19mΩ, 2mm × 2mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The 2mm × 2mm SON package offers excellent thermal performance for the size of the package.
Top ViewProduct Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 25 | V | |
| Qg | Gate Charge Total (4.5V) | 2 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 0.4 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = 3V | 27 | mΩ |
| VGS = 4.5V | 23 | |||
| VGS = 8V | 19 | |||
| VGS(th) | Threshold Voltage | 1.1 | V | |
Device Information
| DEVICE | QTY | MEDIA | PACKAGE(1) | SHIP |
|---|---|---|---|---|
| CSD16301Q2 | 3000 | 7-Inch Reel | SON 2.00mm × 2.00mm Plastic Package |
Reel |
(1) For all available packages, see the orderable addendum at the
end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 25 | V |
| VGS | Gate-to-Source Voltage | +10 / –8 | V |
| ID | Continuous Drain Current (Package Limited) | 5 | A |
| Continuous Drain Current (Silicon Limited), TC = 25°C | 20 | ||
| Continuous Drain Current(1) | 8.2 | ||
| IDM | Pulsed Drain Current(2) | 85 | A |
| PD | Power Dissipation(1) | 2.5 | W |
| Power Dissipation, TC = 25°C | 15 | ||
| TJ, TSTG |
Operating Junction, Storage Temperature |
–55 to 150 | °C |
| EAS | Avalanche Energy, Single Pulse ID = 14A, L = 0.1mH, RG = 25Ω |
10 | mJ |
(1) Typical RθJA = 50°C/W on a 1-in2, 2oz Cu
pad on a 0.06in thick FR4 PCB.
(2) Max RθJC = 8.4°C/W, pulse duration ≤ 100μs, duty
cycle ≤ 1%.
RDS(on) vs
VGS
Gate Charge