SLPS235D October 2009 – November 2016 CSD16301Q2
PRODUCTION DATA.
1 Features
- Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Lead-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 2-mm × 2-mm Plastic Package
2 Applications
- DC-DC Converters
- Battery and Load Management Applications
3 Description
This 25-V, 19-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The 2-mm × 2-mm SON package offers excellent thermal performance for the size of the package.
Top View
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Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 25 | V | |
| Qg | Gate Charge Total (4.5 V) | 2 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 0.4 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = 3 V | 27 | mΩ |
| VGS = 4.5 V | 23 | |||
| VGS = 8 V | 19 | |||
| VGS(th) | Threshold Voltage | 1.1 | V | |
Device Information(1)
| DEVICE | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD16301Q2 | 3000 | 7-Inch Reel | SON 2.00-mm × 2.00-mm Plastic Package |
Tape and Reel |
| CSD16301Q2T | 250 |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 25 | V |
| VGS | Gate-to-Source Voltage | +10 / –8 | V |
| ID | Continuous Drain Current (Package Limited) | 5 | A |
| Continuous Drain Current (Silicon Limited), TC = 25°C | 20 | ||
| Continuous Drain Current(1) | 8.2 | ||
| IDM | Pulsed Drain Current(2) | 85 | A |
| PD | Power Dissipation(1) | 2.5 | W |
| Power Dissipation, TC = 25°C | 15 | ||
| TJ, TSTG |
Operating Junction, Storage Temperature |
–55 to 150 | °C |
| EAS | Avalanche Energy, Single Pulse ID = 14 A, L = 0.1 mH, RG = 25 Ω |
10 | mJ |
- Typical RθJA = 50°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in thick FR4 PCB.
- Max RθJC = 8.4°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
RDS(on) vs VGS |
Gate Charge |