米6体育平台手机版

ZHCSU29E August 2009 – December 2023 CSD16321Q5

PRODUCTION DATA

4.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	25			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 20 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = +10 / –8 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	0.9	1.1	1.4	V
R_DS(on)	Drain-to-source on resistance	V_GS = 3 V, I_D = 25 A		2.8	3.8	mΩ
		V_GS = 4.5 V, I_D = 25 A		2.1	2.6
		V_GS = 8 V, I_D = 25 A		1.9	2.4
g_fs	Transconductance	V_DS = 12.5 V, I_D = 25 A		150		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 12.5 V, f = 1 MHz		2360	3100	pF
C_oss	Output capacitance			1700	2200	pF
C_rss	Reverse transfer capacitance			115	150	pF
R_G	Series gate resistance			1.5	3	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 12.5 V, I_D = 25 A		14	19	nC
Q_gd	Gate charge gate-to-drain			2.5		nC
Q_gs	Gate charge gate-to-source			4		nC
Q_g(th)	Gate charge at V_th			2.1		nC
Q_oss	Output charge	V_DS = 15 V, V_GS = 0 V		36		nC
t_d(on)	Turnon delay time	V_DS = 12.5 V, V_GS = 4.5 V, I_D = 25 A, R_G = 2 Ω		9		ns
t_r	Rise time			15		ns
t_d(off)	Turnoff delay time			27		ns
t_f	Fall time			17		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 25 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse recovery charge	V_DD = 13 V, I_F = 25 A, di/dt = 300 A/μs		33		nC
t_rr	Reverse recovery time	V_DD = 13 V, I_F = 25 A, di/dt = 300 A/μs		32		ns