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ZHCS656A December 2011 – September 2016 CSD16327Q3

PRODUCTION DATA.

请参考 PDF 数据表获取器件具体的封装图。

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	25			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 20 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = +10 / –8 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	0.9	1.2	1.4	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 3 V, I_D = 24 A		5	6.5	mΩ
		V_GS = 4.5 V, I_D = 24 A		4	4.8
		V_GS = 8 V, I_D = 24 A		3.4	4.0
g_fs	Transconductance	V_DS = 12.5 V, I_D = 24 A		96		S
DYNAMIC CHARACTERISTICS
C_ISS	Input capacitance	V_GS = 0 V, V_DS = 12.5 V, ƒ = 1 MHz		1020	1300	pF
C_OSS	Output capacitance			740	960	pF
C_RSS	Reverse transfer capacitance			50	65	pF
R_g	Series gate resistance			1.4	2.8	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 12.5 V, I_D = 24 A		6.2	8.4	nC
Q_gd	Gate charge gate-to-drain			1.1		nC
Q_gs	Gate charge gate-to-source			1.8		nC
Qg(th)	Gate charge at V_th			1		nC
Q_OSS	Output charge	V_DS = 12.5 V, V_GS = 0 V		14		nC
t_d(on)	Turnon delay time	V_DS = 12.5 V, V_GS = 4.5 V I_D = 24 A R_G = 2 Ω		5.3		ns
t_r	Rise time			15		ns
t_d(off)	Turnoff delay time			13		ns
t_f	Fall time			6.3		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_S = 24 A, V_GS = 0 V		0.85	1	V
Q_rr	Reverse recovery charge	V_DD = 12.5 V, I_F = 24 A, di/dt = 300 A/μs		21		nC
t_rr	Reverse recovery time	V_DD = 12.5 V, I_F = 24 A, di/dt = 300 A/μs		16		ns