米6体育平台手机版

SLPS247E December 2009 – August 2014 CSD16340Q3

PRODUCTION DATA.

请参考 PDF 数据表获取器件具体的封装图。

5 Specifications

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_DS = 250 μA	25			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 20 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = +10/–8 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_DS = 250 μA	0.6	0.85	1.1	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 2.5 V, I_DS = 20 A		6.1	7.8	mΩ
		V_GS = 4.5 V, I_DS = 20 A		4.3	5.5	mΩ
		V_GS = 8 V, I_DS = 20 A		3.8	4.5	mΩ
g_ƒs	Transconductance	V_DS = 15 V, I_DS = 20 A		121		S
DYNAMIC CHARACTERISTICS
C_ISS	Input Capacitance	V_GS = 0 V, V_DS = 12.5 V, ƒ = 1 MHz		1050	1350	pF
C_OSS	Output Capacitance			730	950	pF
C_RSS	Reverse Transfer Capacitance			53	69	pF
R_g	Series Gate Resistance			1.5	3	Ω
Q_g	Gate Charge Total (4.5 V)	V_DS = 12.5 V, I_D = 20 A		6.5	9.2	nC
Q_gd	Gate Charge Gate-to-Drain			1.2		nC
Q_gs	Gate Charge Gate-to-Source			2.1		nC
Qg(th)	Gate Charge at V_th			1		nC
Q_OSS	Output Charge	V_DS = 13 V, V_GS = 0 V		15		nC
t_d(on)	Turn On Delay Time	V_DS = 12.5 V, V_GS = 4.5 V, I_D = 20 A R_G = 2 Ω		4.8		ns
t_r	Rise Time			16.1		ns
t_d(off)	Turn Off Delay Time			13.8		ns
t_ƒ	Fall Time			5.2		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_S = 20 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse Recovery Charge	V_DD = 13 V, I_F = 20 A, di/dt = 300 A/μs		14.5		nC
t_rr	Reverse Recovery Time	V_DD = 13 V, I_F = 20 A, di/dt = 300 A/μs		20		ns

THERMAL METRIC⁽¹⁾⁽²⁾		CSD16340Q3	UNITS
THERMAL METRIC⁽¹⁾⁽²⁾		Q3 (8 PINS)	UNITS
θ_JA	Junction-to-Ambient Thermal Resistance	42.0	°C/W
θ_JCtop	Junction-to-Case (top) Thermal Resistance	20.6
θ_JB	Junction-to-Board Thermal Resistance	8.8
ψ_JT	Junction-to-Top Characterization Parameter	0.3
ψ_JB	Junction-to-Board Characterization Parameter	8.7
θ_JCbot	Junction-to-Case (bottom) Thermal Resistance	0.1