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ZHCSHD2D January 2018 – October 2023 CSD16401Q5

PRODUCTION DATA

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	25			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 20 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = –12 V to 16 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	1.2	1.5	1.9	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 4.5 V, I_D = 40 A		1.8	2.3	mΩ
R_DS(on)	Drain-to-source on-resistance	V_GS = 10 V, I_D = 40 A		1.3	1.6	mΩ
g_fs	Transconductance	V_DS = 15 V, I_D = 40 A		168		S
DYNAMIC CHARACTERISTICS
C_ISS	Input capacitance	V_GS = 0 V, V_DS = 12.5 V, ƒ = 1 MHz		3150	4100	pF
C_OSS	Output capacitance			2530	3300	pF
C_RSS	Reverse transfer capacitance			175	230	pF
R_g	Series gate resistance			1.2	2.4	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 12.5 V, ID = 40 A		21	29	nC
Q_gd	Gate charge, gate-to-drain			5.2		nC
Q_gs	Gate charge, gate-to-source			8.3		nC
Qg(th)	Gate charge at Vth			4.8		nC
Q_OSS	Output charge	V_DS = 15 V, V_GS = 0 V		55		nC
t_d(on)	Turnon delay time	V_DS = 12.5 V, V_GS = 4.5 V, I_D = 40 A R_G = 2 Ω		16.6		ns
t_r	Rise time			30		ns
t_d(off)	Turnoff delay time			20		ns
t_f	Fall time			12.7		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_S = 40 A, V_GS = 0 V		0.85	1	V
Q_rr	Reverse recovery charge	V_DD = 15 V, I_F = 40 A, di/dt = 300 A/μs		72		nC
t_rr	Reverse recovery time	V_DD = 15 V, I_F = 40 A, di/dt = 300 A/μs		45		ns