STATIC CHARACTERISTICS |
BVDSS |
Drain-to-source voltage |
VGS = 0 V, ID = 250 μA |
25 |
|
|
V |
IDSS |
Drain-to-source leakage current |
VGS = 0 V, VDS = 20 V |
|
|
1 |
μA |
IGSS |
Gate-to-source leakage current |
VDS = 0 V, VGS = +16/–12 V |
|
|
100 |
nA |
VGS(th) |
Gate-to-source threshold voltage |
VDS = VGS, ID = 250 μA |
1.4 |
1.8 |
2.2 |
V |
RDS(on) |
Drain-to-source on-resistance |
VGS = 4.5 V, ID = 20 A |
|
5.9 |
7.4 |
mΩ |
VGS = 10 V, ID = 20 A |
|
4.2 |
5.3 |
mΩ |
gfs |
Transconductance |
VDS = 15 V, ID = 20 A |
|
53 |
|
S |
DYNAMIC CHARACTERISTICS |
CISS |
Input capacitance |
VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHz |
|
840 |
1100 |
pF |
COSS |
Output capacitance |
|
680 |
950 |
pF |
CRSS |
Reverse transfer capacitance |
|
57 |
80 |
pF |
Rg |
Series gate resistance |
|
|
1.2 |
2.4 |
Ω |
Qg |
Gate charge total (4.5 V) |
VDS = 12.5 V, ID = 20 A |
|
5.8 |
8.1 |
nC |
Qgd |
Gate charge gate to drain |
|
1.5 |
|
nC |
Qgs |
Gate charge gate to source |
|
2.5 |
|
nC |
Qg(th) |
Gate charge at Vth |
|
1.5 |
|
nC |
QOSS |
Output charge |
VDS = 13.6 V, VGS = 0 V |
|
13.9 |
|
nC |
td(on) |
Turn on delay time |
VDS = 12.5 V, VGS = 4.5 V ID = 20 A RG = 2 Ω |
|
7.3 |
|
ns |
tr |
Rise time |
|
12.9 |
|
ns |
td(off) |
Turn off delay time |
|
8.5 |
|
ns |
tf |
Fall time |
|
4.8 |
|
ns |
DIODE CHARACTERISTICS |
VSD |
Diode forward voltage |
IS = 20 A, VGS = 0 V |
|
0.85 |
1.0 |
V |
Qrr |
Reverse recovery charge |
VDD = 13.6 V, IF = 20 A, di/dt = 300 A/μs |
|
18 |
|
nC |
trr |
Reverse recovery time |
VDD = 13.6 V, IF = 20 A, di/dt = 300 A/μs |
|
22 |
|
ns |