SLPS259A December 2011 – September 2015 CSD16415Q5
PRODUCTION DATA.
1 Features
2 Applications
- Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
- Optimized for Synchronous FET Applications
3 Description
This 25 V, 1.3 mΩ, 5 x 6 mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View
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Product Summary
| TA = 25°C | VALUE | UNIT | ||
| VDS | Drain-to-Source Voltage | 25 | V | |
| Qg | Gate Charge, Total (4.5 V) | 21 | nC | |
| Qgd | Gate Charge, Gate-to-Drain | 5.2 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = 4.5 V | 1.5 | mΩ |
| VGS = 10 V | 0.99 | mΩ | ||
| VGS(th) | Threshold Voltage | 1.5 | V | |
Device Information(1)
| DEVICE | PACKAGE | MEDIA | QTY | SHIP |
|---|---|---|---|---|
| CSD16415Q5 | SON 5-mm × 6-mm Plastic Package |
13-inch Reel | 2500 | Tape and Reel |
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
| VDS | Drain-to-Source Voltage | 25 | V |
| VGS | Gate-to-Source Voltage | –12 to 16 | V |
| ID | Continuous Drain Current (Package Limited) | 100 | A |
| Continuous Drain Current (Silicon Limited), TC = 25°C(1) | 261 | ||
| Continuous Drain Current(1) | 38 | ||
| IDM | Pulsed Drain Current, TA = 25°C(2) | 200 | A |
| PD | Power dissipation(1) | 3.2 | W |
| Power Dissipation, , TC = 25°C | 156 | ||
| TJ, Tstg |
Operating Junction and Storage Temperature |
–55 to 150 | °C |
| EAS | Avalanche Energy, Single-Pulse ID = 100 A, L = 0.1 mH, RG = 25 Ω |
500 | mJ |
(1) RθJA = 40°C/W on 1 in2 (6.45 cm2) Cu [2 oz. (0.071 mm thick)] on 0.060 inch (1.52 mm) thick FR4 PCB.
(2) Max RθJC = 0.8°C/W, pulse duration ≤100 μs, duty cycle ≤1%
RDS(ON) vs VGS |
Gate Charge |