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SLPS259A December 2011 – September 2015 CSD16415Q5

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

DQH|8
- MPSS011D

散热焊盘机械数据 (封装 | 引脚)

订购信息

zhcs630_oa

5 Specifications

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = 250 μA	25			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 20 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = –12 V to 16 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	1.2	1.5	1.9	V
R_DS(on)	Drain-to-Source On Resistance	V_GS = 4.5 V, I_D = 40 A		1.5	1.8	mΩ
R_DS(on)	Drain-to-Source On Resistance	V_GS = 10 V, I_D = 40 A		0.99	1.15	mΩ
g_fs	Transconductance	V_DS = 15 V, I_D = 40 A		168		S
DYNAMIC CHARACTERISTICS
C_ISS	Input Capacitance	V_GS = 0 V, V_DS = 12.5 V, ƒ = 1 MHz		3150	4100	pF
C_OSS	Output Capacitance			2530	3300	pF
C_RSS	Reverse Transfer Capacitance			175	230	pF
R_g	Series Gate Resistance			1.2	2.4	Ω
Q_g	Gate Charge Total (4.5 V)	V_DS = 12.5 V, ID = 40 A		21	29	nC
Q_gd	Gate Charge, Gate-to-Drain			5.2		nC
Q_gs	Gate Charge, Gate-to-Source			8.3		nC
Qg(th)	Gate Charge at Vth			4.8		nC
Q_OSS	Output Charge	V_DS = 15 V, V_GS = 0 V		55		nC
t_d(on)	Turnon Delay Time	V_DS = 12.5 V, V_GS = 4.5 V, I_D = 40 A R_G = 2 Ω		16.6		ns
t_r	Rise Time			30		ns
t_d(off)	Turn Off Delay Time			20		ns
t_f	Fall Time			12.7		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_S = 40 A, V_GS = 0 V		0.85	1	V
Q_rr	Reverse Recovery Charge	V_DD = 15 V, I_F = 40 A, di/dt = 300 A/μs		72		nC
t_rr	Reverse Tecovery Time	V_DD = 15 V, I_F = 40 A, di/dt = 300 A/μs		45		ns

5.2 Thermal Information

T_A = 25°C (unless otherwise noted)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Thermal resistance, junction-to-case⁽¹⁾			0.8	°C/W
R_θJA	Thermal resistance, junction-to-ambient⁽¹⁾ ⁽²⁾			50	°C/W

(1) R_θJC is determined with the device mounted on a 1 inch (2.54 cm) square, 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm × 3.81 cm), 0.060 inch (1.52 mm) thick FR4 board. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1 inch² (6.45 cm²) of 2 oz. (0.071 mm thick) Cu.