米6体育平台手机版

ZHCSKK4C February 2010 – December 2019 CSD17308Q3

PRODUCTION DATA.

请参考 PDF 数据表获取器件具体的封装图。

T_A = 25°C unless otherwise stated

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	30			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 24 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = +10 / –8 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	0.9	1.3	1.6	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 3 V, I_D = 10 A		12.5	16.5	mΩ
		V_GS = 4.5 V, I_D = 10 A		9.4	11.8
		V_GS = 8 V, I_D = 10 A		8.2	10.3
g_fs	Transconductance	V_DS = 15 V, I_D = 10 A		37		S
DYNAMIC CHARACTERISTICS
C_ISS	Input capacitance	V_GS = 0 V, V_DS = 15 V, ƒ = 1 MHz		540	700	pF
C_OSS	Output capacitance			280	365	pF
C_RSS	Reverse transfer capacitance			27	35	pF
R_g	Series gate resistance			0.9	1.8	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 15 V, I_D = 10 A		3.9	5.1	nC
Q_gd	Gate charge gate-to-drain			0.8		nC
Q_gs	Gate charge gate-to-source			1.3		nC
Q_g(th)	Gate charge at V_th			0.7		nC
Q_OSS	Output charge	V_DS = 13 V, V_GS = 0 V		7.4		nC
t_d(on)	Turnon delay time	V_DS = 15 V, V_GS = 4.5 V, I_D = 10 A, R_G = 2 Ω		4.5		ns
t_r	Rise time			5.7		ns
t_d(off)	Turnoff delay time			9.9		ns
t_f	Fall time			2.3		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_DS = 10 A, V_GS = 0 V		0.85	1	V
Q_rr	Reverse recovery charge	V_DD = 13 V, I_F = 10 A, di/dt = 300 A/μs		9.3		nC
t_rr	Reverse recovery time	V_DD = 13 V, I_F = 10 A, di/dt = 300 A/μs		14.3		ns