ZHCSAF2D October 2012 – September 2015 CSD17313Q2Q1
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 30 | V | |||
| IDSS | Drain-to-source leakage | VGS = 0 V, VDS = 24 V | 1 | μA | |||
| IGSS | Gate-to-source leakage | VDS = 0 V, VGS = +10 / -8 V | 100 | nA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250 μA | 0.9 | 1.3 | 1.8 | V | |
| RDS(on) | Drain-to-source on resistance | VGS = 3 V, ID = 4 A | 31 | 42 | mΩ | ||
| VGS = 4.5 V, ID = 4 A | 26 | 32 | mΩ | ||||
| VGS = 8 V, ID = 4 A | 24 | 30 | mΩ | ||||
| gfs | Transconductance | VDS = 15 V, ID = 4 A | 16 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input capacitance | VGS = 0 V, VDS = 15 V,
ƒ = 1 MHz |
260 | 340 | pF | ||
| Coss | Output capacitance | 140 | 180 | pF | |||
| Crss | Reverse transfer capacitance | 13 | 17 | pF | |||
| RG | Series gate resistance | 1.3 | 2.6 | Ω | |||
| Qg | Gate charge total (4.5 V) | VDS = 15 V,
ID = 4 A |
2.1 | 2.7 | nC | ||
| Qgd | Gate charge – gate-to-drain | 0.4 | nC | ||||
| Qgs | Gate charge – gate-to-source | 0.7 | nC | ||||
| Qg(th) | Gate charge at Vth | 0.3 | nC | ||||
| Qoss | Output charge | VDS = 13.5 V, VGS = 0 V | 3.8 | nC | |||
| td(on) | Turn on delay time | VDS = 15 V, VGS = 4.5 V,
ID = 4 A, RG = 2 Ω |
2.8 | ns | |||
| tr | Rise time | 3.9 | ns | ||||
| td(off) | Turn off delay time | 4.2 | ns | ||||
| tf | Fall time | 1.3 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | ISD = 4 A, VGS = 0V | 0.85 | 1 | V | ||
| Qrr | Reverse recovery charge | VDD= 13.5 V, IF = 4 A,
di/dt = 300 A/μs |
6.4 | nC | |||
| trr | Reverse recovery time | 12.9 | ns | ||||