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ZHCSAF2D October 2012 – September 2015 CSD17313Q2Q1

PRODUCTION DATA.

请参考 PDF 数据表获取器件具体的封装图。

T_A = 25°C (unless otherwise noted)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

I_D = 4 A

V_DS = 15 V

Figure 4. Gate Charge

I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

I_D = 4 A

Figure 8. Normalized On-State Resistance vs Temperature

Single Pulse, Max R_θJC = 7.4°C/W

Figure 10. Maximum Safe Operating Area

Figure 3. Transfer Characteristics

Figure 5. Capacitance

I_D = 4 A

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching

Figure 12. Maximum Drain Current vs Temperature