ZHCSGE6A February 2017 – July 2017 CSD17318Q2
PRODUCTION DATA.
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 30 | V | |||
| IDSS | Drain-to-source leakage | VGS = 0 V, VDS = 24 V | 1 | μA | |||
| IGSS | Gate-to-source leakage | VDS = 0 V, VGS = 10 V | 100 | nA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250 μA | 0.6 | 0.9 | 1.2 | V | |
| RDS(on) | Drain-to-source on-resistance | VGS = 2.5 V, ID = 8 A | 20 | 30 | mΩ | ||
| VGS = 4.5 V, ID = 8 A | 13.9 | 16.9 | |||||
| VGS = 8 V, ID = 8 A | 12.6 | 15.1 | |||||
| gfs | Transconductance | VDS = 3 V, ID = 8 A | 42 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input capacitance | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz |
676 | 879 | pF | ||
| Coss | Output capacitance | 71 | 92 | pF | |||
| Crss | Reverse transfer capacitance | 39 | 51 | pF | |||
| RG | Series gate resistance | 1.0 | 2.0 | Ω | |||
| Qg | Gate charge total (4.5 V) | VDS = 15 V, ID = 8 A |
6.0 | nC | |||
| Qgd | Gate charge gate-to-drain | 1.3 | nC | ||||
| Qgs | Gate charge gate-to-source | 1.5 | nC | ||||
| Qg(th) | Gate charge at Vth | 0.7 | nC | ||||
| Qoss | Output charge | VDS = 15 V, VGS = 0 V | 2.7 | nC | |||
| td(on) | Turnon delay time | VDS = 15 V, VGS = 4.5 V, ID = 8 A, RG = 2 Ω |
5 | ns | |||
| tr | Rise time | 16 | ns | ||||
| td(off) | Turnoff delay time | 13 | ns | ||||
| tf | Fall time | 4 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | ISD = 8 A, VGS = 0 V | 0.8 | 1.0 | V | ||
| Qrr | Reverse recovery charge | VDD= 15 V, IF = 8 A, di/dt = 300 A/μs |
2.9 | nC | |||
| trr | Reverse recovery time | 12 | ns | ||||
5.2 Thermal Characteristics
TA = 25°C (unless otherwise noted)| PARAMETER | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|
| RθJC | Thermal resistance junction-to-case(1) | 7.9 | °C/W | ||
| RθJA | Thermal resistance junction-to-ambient(1)(2) | 65 | °C/W | ||
(1) RθJC is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-inch (3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
 |
Max RθJA = 65°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu. |
 |
Max RθJA = 250°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu. |
5.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise noted)
| VDS = 5 V |
| ID = 8 A | VDS = 15 V |
| ID = 250 µA |
| ID = 8 A |
| Single pulse, max RθJC = 7.9°C/W |
| ID = 8 A |
