ZHCSBA2G April 2013 – January 2022 CSD17381F4
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-Source Voltage | VGS = 0 V, IDS = 250 μA | 30 | V | |||
| IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = 24 V | 100 | nA | |||
| IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = 10 V | 50 | nA | |||
| VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, IDS = 250 μA | 0.65 | 0.85 | 1.10 | V | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = 1.8 V, IDS =0.5 A | 160 | 250 | mΩ | ||
| VGS = 2.5 V, IDS =0.5 A | 110 | 143 | mΩ | ||||
| VGS = 4.5 V, IDS = 0.5 A | 90 | 117 | mΩ | ||||
| VGS = 8 V, IDS =0.5 A | 84 | 109 | mΩ | ||||
| gfs | Transconductance | VDS = 15 V, IDS = 0.5 A | 4.8 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input Capacitance | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz | 150 | 195 | pF | ||
| Coss | Output Capacitance | 44 | 57 | pF | |||
| Crss | Reverse Transfer Capacitance | 2.2 | 2.9 | pF | |||
| RG | Series Gate Resistance | 23 | Ω | ||||
| Qg | Gate Charge Total (4.5 V) | VDS = 15 V, IDS = 0.5 A | 1040 | 1350 | pC | ||
| Qgd | Gate Charge Gate-to-Drain | 133 | pC | ||||
| Qgs | Gate Charge Gate-to-Source | 226 | pC | ||||
| Qg(th) | Gate Charge at Vth | 150 | pC | ||||
| Qoss | Output Charge | VDS = 15 V, VGS = 0 V | 1110 | pC | |||
| td(on) | Turn On Delay Time | VDS = 15 V, VGS = 4.5 V, IDS = 0.5 A,RG = 2 Ω | 3.4 | ns | |||
| tr | Rise Time | 1.4 | ns | ||||
| td(off) | Turn Off Delay Time | 10.8 | ns | ||||
| tf | Fall Time | 3.6 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode Forward Voltage | ISD = 0.5 A, VGS = 0 V | 0.73 | 0.9 | V | ||
| Qrr | Reverse Recovery Charge | VDS= 15 V, IF = 0.5 A, di/dt = 300 A/μs | 1500 | pC | |||
| trr | Reverse Recovery Time | 5.6 | ns | ||||