ZHCSEW3C April 2016 – February 2022 CSD17382F4
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0 V, IDS = 250 μA | 30 | V | |||
| IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 24 V | 1 | µA | |||
| IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = 10 V | 5 | µA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = 250 μA | 0.7 | 0.9 | 1.2 | V | |
| RDS(on) | Drain-to-source on-resistance | VGS = 1.8 V, IDS =0.5 A | 110 | 180 | mΩ | ||
| VGS = 2.5 V, IDS =0.5 A | 67 | 82 | mΩ | ||||
| VGS = 4.5 V, IDS = 0.5 A | 56 | 67 | mΩ | ||||
| VGS = 8.0 V, IDS = 0.5 A | 54 | 64 | mΩ | ||||
| gfs | Transconductance | VDS = 3 V, IDS = 0.5 A | 5.9 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input capacitance | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz | 267 | 347 | pF | ||
| Coss | Output capacitance | 31.0 | 40.3 | pF | |||
| Crss | Reverse transfer capacitance | 15.0 | 19.5 | pF | |||
| RG | Series gate resistance | 220 | Ω | ||||
| Qg | Gate charge total (4.5 V) | VDS = 15 V, IDS = 0.5 A | 2.1 | 2.7 | nC | ||
| Qgd | Gate charge gate-to-drain | 0.63 | nC | ||||
| Qgs | Gate charge gate-to-source | 0.41 | nC | ||||
| Qg(th) | Gate charge at Vth | 0.12 | nC | ||||
| Qoss | Output charge | VDS = 15 V, VGS = 0 V | 1.53 | nC | |||
| td(on) | Turn on delay time | VDS = 15 V, VGS = 4.5 V, IDS = 0.5 A, RG = 0 Ω | 59 | ns | |||
| tr | Rise time | 111 | ns | ||||
| td(off) | Turn off delay time | 279 | ns | ||||
| tf | Fall time | 270 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | ISD = 0.5 A, VGS = 0 V | 0.7 | 1.0 | V | ||