米6体育平台手机版

ZHCSBA8F July 2013 – February 2022 CSD17483F4

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_DS = 250 μA	30			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 24 V			100	nA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 10 V			50	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_DS = 250 μA	0.65	0.85	1.10	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 1.8 V, I_DS =0.5 A		370	550	mΩ
		V_GS = 2.5 V, I_DS =0.5 A		240	310
		V_GS = 4.5 V, I_DS = 0.5 A		200	260
		V_GS = 8 V, I_DS = 0.5 A		185	240
g_fs	Transconductance	V_DS = 15 V, I_DS = 0.5 A		2.4		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 15 V, ƒ = 1 MHz		145	190	pF
C_oss	Output capacitance			42	55	pF
C_rss	Reverse transfer capacitance			2	3	pF
R_G	Series gate resistance			23		Ω
Q_g	Gate charge total (4.5 V)	V_DS = 15 V, I_DS = 0.5 A		1010	1300	pC
Q_gd	Gate charge gate-to-drain			130		pC
Q_gs	Gate charge gate-to-source			220		pC
Q_g(th)	Gate charge at V_th			145		pC
Q_oss	Output charge	V_DS = 15 V, V_GS = 0 V		1095		pC
t_d(on)	Turnon delay time	V_DS = 15 V, V_GS = 4.5 V, I_DS = 0.5 A,R_G = 2 Ω		3.3		ns
t_r	Rise time			1.3		ns
t_d(off)	Turnoff delay time			10.6		ns
t_f	Fall time			3.4		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 0.5 A, V_GS = 0 V		0.73	0.9	V
Q_rr	Reverse recovery charge	V_DS= 15 V, I_F = 0.5 A, di/dt = 300 A/μs		1475		pC
t_rr	Reverse recovery time	V_DS= 15 V, I_F = 0.5 A, di/dt = 300 A/μs		5.5		ns