米6体育平台手机版

ZHCSCT3A September 2014 – January 2016 CSD17579Q3A

PRODUCTION DATA.

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

DNH|8

散热焊盘机械数据 (封装 | 引脚)

订购信息

zhcsct3a_oa

5 Specifications

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	30			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 24 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	1.1	1.5	1.9	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 4.5 V, I_D = 8 A		11.8	14.2	mΩ
R_DS(on)	Drain-to-source on-resistance	V_GS = 10 V, I_D = 8 A		8.7	10.2	mΩ
g_fs	Transconductance	V_DS = 3 V, I_D = 8 A		37		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 15 V, ƒ = 1 MHz		768	998	pF
C_oss	Output capacitance			93	121	pF
C_rss	Reverse transfer capacitance			38	49	pF
R_G	Series gate resistance			1.9	3.8	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 15 V, I_D = 8 A		5.3	6.9	nC
Q_g	Gate charge total (10 V)			11.5	15.0	nC
Q_gd	Gate charge gate-to-drain			1.2		nC
Q_gs	Gate charge gate-to-source			2.2		nC
Q_g(th)	Gate charge at V_th			1.1		nC
Q_oss	Output charge	V_DS = 15 V, V_GS = 0 V		3.0		nC
t_d(on)	Turn on delay time	V_DS = 15 V, V_GS = 10 V, I_DS = 8 A, R_G = 0 Ω		2		ns
t_r	Rise time			5		ns
t_d(off)	Turn off delay time			11		ns
t_f	Fall time			1		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 8 A, V_GS = 0 V		0.8	1.0	V
Q_rr	Reverse recovery charge	V_DS= 15 V, I_F = 8 A, di/dt = 300 A/μs		3.4		nC
t_rr	Reverse recovery time	V_DS= 15 V, I_F = 8 A, di/dt = 300 A/μs		5		ns

5.2 Thermal Information

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-case thermal resistance ⁽¹⁾			5.4	°C/W
R_θJA	Junction-to-ambient thermal resistance⁽¹⁾⁽²⁾			60	°C/W

(1) R_θJC is determined with the device mounted on a 1 inch² (6.45 cm²), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch
(3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1 inch² (6.45 cm²), 2 oz. (0.071 mm thick) Cu.

Max R_θJA = 60°C/W when mounted on 1 inch² (6.45 cm²) of
2 oz. (0.071 mm thick) Cu.

Max R_θJA = 145°C/W when mounted on a minimum pad area of 2 oz. (0.071 mm thick) Cu.

5.3 Typical MOSFET Characteristics

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

	I_D = 8 A	V_DS = 15 V

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 8 A

Figure 8. Normalized On-State Resistance vs Temperature

	Single Pulse, Max R_θJC = 5.4°C/W

Figure 10. Maximum Safe Operating Area

Figure 12. Maximum Drain Current vs Temperature

	V_DS = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching