米6体育平台手机版

ZHCSDF8 March 2015 CSD17579Q5A

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

DQJ|8
- MPSS010B

散热焊盘机械数据 (封装 | 引脚)

订购信息

zhcsdf8_oa

5 Specifications

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = 250 μA	30			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 24 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	1.0	1.5	2.0	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5 V, I_D = 8 A		11.6	13.3	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10 V, I_D = 8 A		8.4	9.7	mΩ
g_ƒs	Transconductance	V_DS = 3 V, I_D = 8 A		36		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0 V, V_DS = 15 V, ƒ = 1 MHz		796	1030	pF
C_oss	Output Capacitance			95	124	pF
C_rss	Reverse Transfer Capacitance			40	52	pF
R_G	Series Gate Resistance			1.9	3.8	Ω
Q_g	Gate Charge Total (4.5 V)	V_DS = 15 V, I_D = 8 A		5.4	7	nC
Q_g	Gate Charge Total (10 V)			11.6	15.1	nC
Q_gd	Gate Charge Gate-to-Drain			1.2		nC
Q_gs	Gate Charge Gate-to-Source			2.3		nC
Q_g(th)	Gate Charge at V_th			1.1		nC
Q_oss	Output Charge	V_DS = 15 V, V_GS = 0 V		2.9		nC
t_d(on)	Turn On Delay Time	V_DS = 15 V, V_GS = 10 V, I_DS = 8 A, R_G = 0 Ω		3		ns
t_r	Rise Time			7		ns
t_d(off)	Turn Off Delay Time			13		ns
t_ƒ	Fall Time			1		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 8 A, V_GS = 0 V		0.8	1.0	V
Q_rr	Reverse Recovery Charge	V_DS= 15 V, I_F = 8 A, di/dt = 300 A/μs		4.2		nC
t_rr	Reverse Recovery Time	V_DS= 15 V, I_F = 8 A, di/dt = 300 A/μs		5.7		ns

5.2 Thermal Information

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-Case Thermal Resistance ⁽¹⁾			4.3	°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽¹⁾⁽²⁾			50	°C/W

(1) R_θJC is determined with the device mounted on a 1 inch² (6.45 cm²), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inches × 1.5 inches
(3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1 inch² (6.45-cm²), 2 oz. (0.071 mm thick) Cu.

Max R_θJA = 50°C/W when mounted on 1 inch² (6.45 cm²) of
2 oz. (0.071 mm thick) Cu.

Max R_θJA = 140°C/W when mounted on a minimum pad area of
2 oz. (0.071 mm thick) Cu.

5.3 Typical MOSFET Characteristics

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

I_D = 8 A		V_DS = 15 V

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 8 A

Figure 8. Normalized On-State Resistance vs Temperature

Single Pulse, Max R_θJC = 4.3°C/W

Figure 10. Maximum Safe Operating Area

Figure 12. Maximum Drain Current vs Temperature

	V_DS = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching