米6体育平台手机版

ZHCSFK6 October 2016 CSD17581Q3A

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

DNH|8
- MPDS575A

散热焊盘机械数据 (封装 | 引脚)

订购信息

zhcsfk6_oa

5 Specifications

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	30			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 24 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	1.0	1.3	1.7	V
R_DS(on)	Drain-to-source On-resistance	V_GS = 4.5 V, I_D = 16 A		3.9	4.7	mΩ
R_DS(on)	Drain-to-source On-resistance	V_GS = 10 V, I_D = 16 A		3.2	3.8	mΩ
g_fs	Transconductance	V_DS = 3 V, I_D = 16 A		78		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 15 V, ƒ = 1 MHz		2800	3640	pF
C_oss	Output capacitance			342	445	pF
C_rss	Reverse transfer capacitance			150	195	pF
R_G	Series gate resistance			1.8	3.6	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 15 V, I_D = 16 A		20	25	nC
Q_g	Gate charge total (10 V)			41	54	nC
Q_gd	Gate charge gate-to-drain			4.0		nC
Q_gs	Gate charge gate-to-source			6.9		nC
Q_g(th)	Gate charge at V_th			3.6		nC
Q_oss	Output charge	V_DS = 15 V, V_GS = 0 V		11.7		nC
t_d(on)	Turnon delay time	V_DS = 15 V, V_GS = 10 V, I_DS = 16 A, R_G = 0 Ω		12		ns
t_r	Rise time			23		ns
t_d(off)	Turnoff delay time			23		ns
t_f	Fall time			10		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 16 A, V_GS = 0 V		0.8	1.0	V
Q_rr	Reverse recovery charge	V_DS= 15 V, I_F = 16 A, di/dt = 300 A/μs		10.2		nC
t_rr	Reverse recovery time	V_DS= 15 V, I_F = 16 A, di/dt = 300 A/μs		9.8		ns

5.2 Thermal Information

T_A = 25°C (unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-case thermal resistance⁽¹⁾			2	°C/W
R_θJA	Junction-to-ambient thermal resistance⁽¹⁾⁽²⁾			55	°C/W

(1) R_θJC is determined with the device mounted on a 1-in² (6.45-cm²), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in
(3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1-in² (6.45-cm²), 2-oz (0.071-mm) thick Cu.

Max R_θJA = 55°C/W when mounted on 1-in² (6.45-cm²) of
2-oz (0.071-mm) thick Cu.

Max R_θJA = 160°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu.

5.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

	I_D = 16 A	V_DS = 15 V

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 16 A

Figure 8. Normalized On-State Resistance vs Temperature

	Single pulse, max R_θJC = 2°C/W

Figure 10. Maximum Safe Operating Area (SOA)

Figure 12. Maximum Drain Current vs Temperature

	V_DS = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching