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ZHCSFM2C October 2016 – June 2022 CSD17585F5

PRODUCTION DATA

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_DS = 250 μA	30			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 24 V			100	nA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			50	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_DS = 250 μA	0.9	1.3	1.7	V
R_DS(on)	Drain-to-source on resistance	V_GS = 4.5 V, I_DS = 0.9 A		26	33	mΩ
R_DS(on)	Drain-to-source on resistance	V_GS = 10 V, I_DS = 0.9 A		22	27	mΩ
g_fs	Transconductance	V_DS = 3 V, I_DS = 0.9 A		7		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 15 V, ƒ = 1 MHz		292	380	pF
C_oss	Output capacitance			166	215	pF
C_rss	Reverse transfer capacitance			5.7	7.4	pF
R_G	Series gate resistance			34		Ω
Q_g	Gate charge total (4.5 V)	V_DS = 15 V, I_DS = 0.9 A		1.9	2.4	nC
Q_g	Gate charge total (10 V)			3.9	5.1	nC
Q_gd	Gate charge gate-to-drain			0.39		nC
Q_gs	Gate charge gate-to-source			0.53		nC
Q_g(th)	Gate charge at V_th			0.42		nC
Q_oss	Output charge	V_DS = 15 V, V_GS = 0 V		4.1		nC
t_d(on)	Turnon delay time	V_DS = 15 V, V_GS = 4.5 V, I_DS = 0.9 A, R_G = 2 Ω		4		ns
t_r	Rise time			4		ns
t_d(off)	Turnoff delay time			31		ns
t_f	Fall time			11		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 0.9 A, V_GS = 0 V		0.74	1.0	V