CSD18501Q5A 40V N 通道 NexFET 功率金属氧化物半导体场效应晶体管 (MOSFET)

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1 特性

超低 Q_g 和 Q_gd
低热阻
雪崩额定值
逻辑电平
无铅引脚镀层
符合 RoHS 标准
无卤素
小外形尺寸无引线 (SON) 5mm x 6mm 塑料封装

2 应用范围

直流 - 直流转换
次级侧同步整流
电池电机控制

3 说明

这款 40V，2.5mΩ，SON 5mm × 6mm NexFET™ 功率 MOSFET 被设计成在功率转换应用中最大限度地降低功率损耗。

顶视图

米6体育平台手机版_好二三四概要

T_A = 25°C		典型值		单位
V_DS	漏源电压	40		V
Q_g	栅极电荷总量 (4.5V)	20		nC
Q_gd	栅极电荷（栅极到漏极）	5.9		nC
R_DS(on)	漏源导通电阻	V_GS = 4.5V	3.3	mΩ
R_DS(on)	漏源导通电阻	V_GS = 10V	2.5	mΩ
V_GS(th)	阈值电压	1.8		V

订购信息⁽¹⁾

器件	数量	介质	封装	出货
CSD18501Q5A	2500	13 英寸卷带	SON 5mm × 6mm 塑料封装	卷带封装
CSD18501Q5AT	250	7 英寸卷带	SON 5mm × 6mm 塑料封装	卷带封装

要了解所有可用封装，请见数据表末尾的可订购米6体育平台手机版_好二三四附录。

最大绝对额定值

T_A = 25°C		值	单位
V_DS	漏源电压	40	V
V_GS	栅源电压	±20	V
I_D	持续漏极电流（受封装限制）	100	A
	持续漏极电流（受芯片限制），T_C = 25°C 时测得	161	A
	持续漏极电流 ⁽¹⁾	22	A
I_DM	脉冲漏极电流 ⁽²⁾	400	A
P_D	功率耗散⁽¹⁾	3.1	W
P_D	功耗，T_C = 25°C	150	W
T_J， T_stg	运行结温和储存温度范围	-55 至 150	°C
E_AS	雪崩能量，单一脉冲 I_D=68A，L=0.1mH，R_G=25Ω	231	mJ

R_θJA = 40°C/W，这是在一个厚度 0.06 英寸环氧树脂 (FR4) 印刷电路板 (PCB) 上的 1 英寸²，2 盎司的铜过渡垫片上测得的典型值。
最大 R_θJC = 1.0°C/W，脉冲持续时间 ≤ 100μs，占空比 ≤ 1%

R_DS(on) 与 V_GS 间的关系

栅极电荷

4 修订历史记录

Changes from B Revision (October 2012) to C Revision

已添加器件编号至标题Go
在订购信息表中添加了 7 英寸卷带Go
已将受芯片限制的持续漏极电流增加至 161A Go
已将脉冲漏极电流增加至 400A Go
已添加外壳温度保持在 25°C 时的最大功耗一行Go
已更新脉冲电流条件 Go
Updated Figure 1 to a normalized R_θJC curve Go
Updated the SOA in Figure 9Go
已添加建议模板开口Go

Changes from A Revision (June 2012) to B Revision

Changed the Transconductance TYP value From: 142 S To: 118 S.Go
Changed the Turn On and Turn Off Delay Time, Rise and Fall Time Test Conditions From: I_DS = 25 A, R_G = 2 Ω To: I_DS = 25 A, R_G = 0 ΩGo
Changed the Q_rr Reverse Recovery Charge TYP value From: 21 nC To: 70 nCGo

Changes from * Revision (June 2012) to A Revision

已添加“T_A = 25°C”至米6体育平台手机版_好二三四概要表Go

5 Specifications

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = 250 μA	40			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 32 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	1.4	1.8	2.3	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5 V, I_D = 25 A		3.3	4.3	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10 V, I_D = 25 A		2.5	3.2	mΩ
g_ƒs	Transconductance	V_DS = 20 V, I_D = 25 A		118		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0 V, V_DS = 20 V, ƒ = 1 MHz		3200	3840	pF
C_oss	Output Capacitance			725	870	pF
C_rss	Reverse Transfer Capacitance			18	23	pF
R_G	Series Gate Resistance			1.2	2.4	Ω
Q_g	Gate Charge Total (4.5 V)	V_DS = 20 V, I_D = 25 A		20	24	nC
Q_g	Gate Charge Total (10 V)			42	50	nC
Q_gd	Gate Charge Gate-to-Drain			5.9		nC
Q_gs	Gate Charge Gate-to-Source			8.1		nC
Q_g(th)	Gate Charge at Vth			5.7		nC
Q_oss	Output Charge	V_DS = 20 V, V_GS = 0 V		48		nC
t_d(on)	Turn On Delay Time	V_DS = 20 V, V_GS = 10 V, I_DS = 25 A, R_G = 0		4.7		ns
t_r	Rise Time			10		ns
t_d(off)	Turn Off Delay Time			20		ns
t_ƒ	Fall Time			3.4		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_DS = 25 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse Recovery Charge	V_DS= 20 V, I_F = 25 A, di/dt = 300 A/μs		70		nC
t_rr	Reverse Recovery Time	V_DS= 20 V, I_F = 25 A, di/dt = 300 A/μs		40		ns

5.2 Thermal Information

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-Case Thermal Resistance⁽¹⁾			1.0	°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽¹⁾⁽²⁾			50	°C/W

(1) R_θJC is determined with the device mounted on a 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches
(3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu.