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ZHCSA52C October 2011 – March 2024 CSD18502KCS

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

4.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0V, I_D = 250μA	40			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0V, V_DS = 32V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0V, V_GS = 20V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250μA	1.5	1.8	2.1	V
R_DS(on)	Drain-to-Source On Resistance	V_GS = 4.5V, I_D = 100A		3.3	4.3	mΩ
R_DS(on)	Drain-to-Source On Resistance	V_GS = 10V, I_D = 100A		2.4	2.9	mΩ
g_fs	Transconductance	V_DS = 20V, I_D = 100A		138		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0V, V_DS = 20V, ƒ = 1MHz		3900	4680	pF
C_oss	Output Capacitance			900	1080	pF
C_rss	Reverse Transfer Capacitance			21	26	pF
R_G	Series Gate Resistance			1.2	2.4	Ω
Q_g	Gate Charge Total (4.5 V)	V_DS = 20V, I_D = 100A		25	30	nC
Q_g	Gate Charge Total (10 V)			52	62	nC
Q_gd	Gate Charge Gate-to-Drain			8.4		nC
Q_gs	Gate Charge Gate-to-Source			10.3		nC
Q_g(th)	Gate Charge at V_th			7.5		nC
Q_oss	Output Charge	V_DS = 20V, V_GS = 0V		52		nC
t_d(on)	Turn On Delay Time	V_DS = 20V, V_GS = 10V, I_DS = 100A, R_G = 0Ω		11		ns
t_r	Rise Time			7.3		ns
t_d(off)	Turn Off Delay Time			33		ns
t_f	Fall Time			9.3		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 100A, V_GS = 0V		0.8	1	V
Q_rr	Reverse Recovery Charge	V_DS= 20V, I_F = 100A, di/dt = 300A/μs		105		nC
t_rr	Reverse Recovery Time	V_DS= 20V, I_F = 100A, di/dt = 300A/μs		48		ns