米6体育平台手机版

ZHCSAJ6B November 2012 – May 2017 CSD18502Q5B

PRODUCTION DATA.

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

DNK|8

散热焊盘机械数据 (封装 | 引脚)

订购信息

5 Specifications

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain to source voltage	V_GS = 0 V, I_D = 250 μA	40			V
I_DSS	Drain to source leakage current	V_GS = 0 V, V_DS = 32 V			1	μA
I_GSS	Gate to source leakage current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate to source threshold voltage	V_DS = V_GS, I_D = 250 μA	1.5	1.8	2.2	V
R_DS(on)	Drain to source on resistance	V_GS = 4.5 V, I_D = 30 A		2.5	3.3	mΩ
R_DS(on)	Drain to source on resistance	V_GS = 10 V, I_D = 30 A		1.8	2.3	mΩ
g_fs	Transconductance	V_DS = 20 V, I_D = 30 A		143		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 20 V, ƒ= 1 MHz		3900	5070	pF
C_oss	Output capacitance			900	1170	pF
C_rss	Reverse transfer capacitance			21	27	pF
R_G	Series gate resistance			1.2	2.4	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 20 V, I_D = 30 A		25	33	nC
Q_g	Gate charge total (10 V)			52	68	nC
Q_gd	Gate charge gate to drain			8.4		nC
Q_gs	Gate charge gate to source			10.3		nC
Q_g(th)	Gate charge at V_th			6.9		nC
Q_oss	Output charge	V_DS = 20 V, V_GS = 0 V		59		nC
t_d(on)	Turn on delay time	V_DS = 20 V, V_GS = 10 V, I_DS = 30 A, R_G = 0 Ω		5.3		ns
t_r	Rise time			6.8		ns
t_d(off)	Turn off delay time			23		ns
t_f	Fall time			4		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 30 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse recovery charge	V_DS= 20 V, I_F = 30 A, di/dt = 300 A/μs		88		nC
t_rr	Reverse recovery time	V_DS= 20 V, I_F = 30 A, di/dt = 300 A/μs		44		ns

5.2 Thermal Information

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-case (top of package) thermal resistance⁽¹⁾			0.8	°C/W
R_θJA	Junction-to-ambient thermal resistance⁽¹⁾⁽²⁾			50	°C/W

(1) R_θJC is determined with the device mounted on a 1 inch² (6.45 cm²), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1 inch² (6.45 cm²), 2 oz. (0.071 mm thick) Cu.