4 修订历史记录

Changes from B Revision (November 2012) to C Revision

• Added 部件编号至标题Go
• 在订购信息表中添加了 7 英寸卷带Go
• 已更新持续漏极电流Go
• 已更新脉冲漏极电流Go
• 已更新脉冲电流条件 Go
• Updated Max R_θJCGo
• Updated Figure 1Go
• Updated SOA in Figure 10Go
• Updated Figure 12Go
• 已添加社区资源Go
• 已更新封装尺寸 Go
• Added 建议模板开口Go

Changes from A Revision (October 2012) to B Revision

• Added 外壳温度保持在 25°C 时的最大功耗一行Go
• 已更改 R_DS(on) 与 V_GS 的关系曲线图以及栅极充电曲线图 Go
• Changed Max R_θJA = 121°C/W To: Max R_θJA = 125°C/WGo
• Changed the Typical MOSFET Characteristics sectionGo

Changes from * Revision (June 2012) to A Revision

• Changed the Transconductance TYP value From: 127 S To: 100 SGo
• Changed the Turn On and Turn Off Delay Time, Rise andFall Time Test Conditions From: I_DS = 22 A, R_G = 2 Ω To: I_DS = 22 A, R_G = 0 ΩGo
• Changed the Q_rr Reverse Recovery Charge TYP value From: 22 nC To: 52 nCGo