米6体育平台手机版

ZHCSCK1A June 2014 – May 2017 CSD18509Q5B

PRODUCTION DATA.

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

DNK|8

散热焊盘机械数据 (封装 | 引脚)

订购信息

zhcsck1a_oa

5 Specifications

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = 250 μA	40			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 32 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	1.4	1.8	2.2	V
R_DS(on)	Drain-to-Source On Resistance	V_GS = 4.5 V, I_D = 32 A		1.3	1.7	mΩ
R_DS(on)	Drain-to-Source On Resistance	V_GS = 10 V, I_D = 32 A		1	1.2	mΩ
g_fs	Transconductance	V_DS = 4 V, I_D = 32 A		180		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0 V, V_DS = 20 V, ƒ = 1 MHz		10700	13900	pF
C_oss	Output Capacitance			821	1070	pF
C_rss	Reverse Transfer Capacitance			272	354	pF
R_G	Series Gate Resistance			0.8	1.6	Ω
Q_g	Gate Charge Total (4.5 V)	V_DS = 20 V, I_D = 32 A		70	91	nC
Q_g	Gate Charge Total (10 V)			150	195	nC
Q_gd	Gate Charge Gate-to-Drain			17		nC
Q_gs	Gate Charge Gate-to-Source			29		nC
Q_g(th)	Gate Charge at V_th			18		nC
Q_oss	Output Charge	V_DS = 20 V, V_GS = 0 V		39		nC
t_d(on)	Turn On Delay Time	V_DS = 20 V, V_GS = 10 V, I_DS = 32 A, R_G = 0 Ω		9		ns
t_r	Rise Time			19		ns
t_d(off)	Turn Off Delay Time			57		ns
t_f	Fall Time			11		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 32 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse Recovery Charge	V_DS= 20 V, I_F = 32 A, di/dt = 300 A/μs		40		nC
t_rr	Reverse Recovery Time	V_DS= 20 V, I_F = 32 A, di/dt = 300 A/μs		23		ns

5.2 Thermal Information

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-Case Thermal Resistance⁽¹⁾			0.8	°C/W
R_θJA	Junction-to-Ambient Thermal Resistance ⁽¹⁾⁽²⁾			50	°C/W

(1) R_θJC is determined with the device mounted on a 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu.

Max R_θJA = 50°C/W when mounted on 1 inch² (6.45 cm²) of
2-oz. (0.071-mm thick) Cu.

Max R_θJA = 125°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu.

5.3 Typical MOSFET Characteristics

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

I_D = 32 A		V_DS = 20 V

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 32 A

Figure 8. Normalized On-State Resistance vs Temperature

Single Pulse, Max R_θJC = 0.8°C/W

Figure 10. Maximum Safe Operating Area

Figure 12. Maximum Drain Current vs Temperature

	V_DS = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching