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ZHCSFT0 December 2016 CSD18511Q5A

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

DQJ|8
- MPSS010B

散热焊盘机械数据 (封装 | 引脚)

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zhcsft0_oa

5 Specifications

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = 250 μA	40			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 32 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	1.5	1.8	2.4	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5 V, I_D = 24 A		2.7	3.5	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10 V, I_D = 24 A		1.9	2.3	mΩ
g_ƒs	Transconductance	V_DS = 20 V, I_D = 24 A		5.2		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0 V, V_DS = 20 V, ƒ = 1 MHz		4500	5850	pF
C_oss	Output Capacitance			452	588	pF
C_rss	Reverse Transfer Capacitance			238	309	pF
R_G	Series Gate Resistance			0.7	1.4	Ω
Q_g	Gate Charge Total (10 V)	V_DS = 20 V, I_D = 24 A		63	82	nC
Q_g	Gate Charge Total (4.5 V)			31	41	nC
Q_gd	Gate Charge Gate-to-Drain			11.2		nC
Q_gs	Gate Charge Gate-to-Source			13.2		nC
Q_g(th)	Gate Charge at Vth			8.2		nC
Q_oss	Output Charge	V_DS = 20 V, V_GS = 0 V		20		nC
t_d(on)	Turn On Delay Time	V_DS = 20 V, V_GS = 10 V, I_DS = 24 A, R_G = 0		6		ns
t_r	Rise Time			15		ns
t_d(off)	Turn Off Delay Time			24		ns
t_ƒ	Fall Time			5		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_DS = 24 A, V_GS = 0 V		0.75	1	V
Q_rr	Reverse Recovery Charge	V_DS= 20 V, I_F = 24 A, di/dt = 300 A/μs		17		nC
t_rr	Reverse Recovery Time	V_DS= 20 V, I_F = 24 A, di/dt = 300 A/μs		14		ns

5.2 Thermal Information

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-Case Thermal Resistance⁽¹⁾			1.2	°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽¹⁾⁽²⁾			50	°C/W

(1) R_θJC is determined with the device mounted on a 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches
(3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu.

Max R_θJA = 50°C/W when mounted on 1 inch² (6.45-cm²) of
2-oz. (0.071-mm thick) Cu.

Max R_θJA = 125°C/W when mounted on a minimum pad area of 2-oz.
(0.071-mm thick) Cu.

5.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

	I_D = 24 A, V_DS = 20 V

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 24 A

Figure 8. Normalized On-State Resistance vs Temperature

	Single pulse, max R_θJC= 1.2°C/W

Figure 10. Maximum Safe Operating Area

	Max R_θJC= 1.2°C/W

Figure 12. Maximum Drain Current vs Temperature

	V_DS = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching