米6体育平台手机版

ZHCSFS9A December 2016 – March 2019 CSD18512Q5B

PRODUCTION DATA.

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain to source voltage	V_GS = 0 V, I_D = 250 μA	40			V
I_DSS	Drain to source leakage current	V_GS = 0 V, V_DS = 32 V			1	μA
I_GSS	Gate to source leakage current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate to source threshold voltage	V_DS = V_GS, I_D = 250 μA	1.3	1.6	2.2	V
R_DS(on)	Drain to source on resistance	V_GS = 4.5 V, I_D = 30 A		1.8	2.3	mΩ
R_DS(on)	Drain to source on resistance	V_GS = 10 V, I_D = 30 A		1.3	1.6	mΩ
g_fs	Transconductance	V_DS = 20 V, I_D = 30 A		136		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 20 V, ƒ= 1 MHz		5480	7120	pF
C_oss	Output capacitance			537	699	pF
C_rss	Reverse transfer capacitance			256	333	pF
R_G	Series gate resistance			1.0	2.0	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 20 V, I_D = 30 A		37	48	nC
Q_g	Gate charge total (10 V)			75	98	nC
Q_gd	Gate charge gate to drain			13.3		nC
Q_gs	Gate charge gate to source			15.1		nC
Q_g(th)	Gate charge at V_th			8.2		nC
Q_oss	Output charge	V_DS = 20 V, V_GS = 0 V		23		nC
t_d(on)	Turn on delay time	V_DS = 20 V, V_GS = 10 V, I_DS = 30 A, R_G = 0 Ω		7		ns
t_r	Rise time			16		ns
t_d(off)	Turn off delay time			31		ns
t_f	Fall time			7		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 30 A, V_GS = 0 V		0.75	1.0	V
Q_rr	Reverse recovery charge	V_DS= 20 V, I_F = 30 A, di/dt = 300 A/μs		22		nC
t_rr	Reverse recovery time	V_DS= 20 V, I_F = 30 A, di/dt = 300 A/μs		17		ns