米6体育平台手机版

ZHCSB81C June 2013 – February 2018 CSD18532NQ5B

PRODUCTION DATA.

请参考 PDF 数据表获取器件具体的封装图。

T_A = 25°C unless otherwise stated

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	60			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 48 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	2.4	2.8	3.4	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 6 V, I_D = 25 A		3.5	4.4	mΩ
R_DS(on)	Drain-to-source on-resistance	V_GS = 10 V, I_D = 25 A		2.7	3.4	mΩ
g_fs	Transconductance	V_DS = 30 V, I_D = 25 A		140		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 30 V, ƒ = 1 MHz		4100	5340	pF
C_oss	Output capacitance			495	644	pF
C_rss	Reverse transfer capacitance			16	21	pF
R_G	Series gate resistance			1.2	2.4	Ω
Q_g	Gate charge total (10 V)	V_DS = 30 V, I_D = 25 A		49	64	nC
Q_gd	Gate charge gate-to-drain			7.9		nC
Q_gs	Gate charge gate-to-source			16		nC
Q_g(th)	Gate charge at V_th			11		nC
Q_oss	Output charge	V_DS = 30 V, V_GS = 0 V		69		nC
t_d(on)	Turnon delay time	V_DS = 30 V, V_GS = 10 V, I_DS = 25 A, R_G = 0 Ω		8.2		ns
t_r	Rise time			8.7		ns
t_d(off)	Turnoff delay time			20		ns
t_f	Fall time			2.7		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 25 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse recovery charge	V_DS = 30 V, I_F = 25 A, di/dt = 300 A/μs		139		nC
t_rr	Reverse recovery time	V_DS = 30 V, I_F = 25 A, di/dt = 300 A/μs		64		ns