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ZHCSA79D September 2012 – March 2024 CSD18533KCS

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

4.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0V, I_D = 250μA	60			V
I_DSS	Drain-to-source leakage current	V_GS = 0V, V_DS = 48V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0V, V_GS = 20V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250μA	1.5	1.9	2.3	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 4.5V, I_D = 75A		6.9	9.0	mΩ
R_DS(on)	Drain-to-source on-resistance	V_GS = 10V, I_D = 75A		5.0	6.3	mΩ
g_fs	Transconductance	V_DS = 30V, I_D = 75A		150		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0V, V_DS = 30V, ƒ = 1MHz		2420	3025	pF
C_oss	Output capacitance			300	375	pF
C_rss	Reverse transfer capacitance			7	9.1	pF
R_G	Series gate resistance			1.4	2.8	Ω
Q_g	Gate charge total (4.5V)	V_DS = 30V, I_D = 75A		14	17	nC
Q_g	Gate charge total (10V)			28	34	nC
Q_gd	Gate charge gate-to-drain			3.9		nC
Q_gs	Gate charge gate-to-source			9.4		nC
Q_g(th)	Gate charge at V_th			4.6		nC
Q_oss	Output charge	V_DS = 30V, V_GS = 0V		31		nC
t_d(on)	Turn on delay time	V_DS = 30V, V_GS = 10V, I_DS = 75A, R_G = 0Ω		5.7		ns
t_r	Rise time			4.8		ns
t_d(off)	Turn off delay time			13		ns
t_f	Fall time			3.2		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 75A, V_GS = 0V		0.8	1	V
Q_rr	Reverse recovery charge	V_DS= 30V, I_F = 75A, di/dt = 300A/μs		97		nC
t_rr	Reverse recovery time	V_DS= 30V, I_F = 75A, di/dt = 300A/μs		49		ns