米6体育平台手机版

ZHCSAE1D October 2012 – June 2015 CSD18534Q5A

PRODUCTION DATA.

请参考 PDF 数据表获取器件具体的封装图。

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	60			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 48 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	1.5	1.9	2.3	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 4.5 V, I_D = 14 A		9.9	12.4	mΩ
R_DS(on)	Drain-to-source on-resistance	V_GS = 10 V, I_D = 14 A		7.8	9.8	mΩ
g_fs	Transconductance	V_DS = 30 V, I_D = 14 A		72		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 30 V, ƒ = 1 MHz		1360	1770	pF
C_oss	Output capacitance			167	217	pF
C_rss	Reverse transfer capacitance			5	6.5	pF
R_G	Series gate resistance			1.5	3	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 30 V, I_D = 14 A		8.5	11.1	nC
Q_g	Gate charge total (10 V)			17	22	nC
Q_gd	Gate charge gate-to-drain			3.5		nC
Q_gs	Gate charge gate-to-source			3.2		nC
Q_g(th)	Gate charge at V_th			2.6		nC
Q_oss	Output charge	V_DS = 30 V, V_GS = 0 V		19		nC
t_d(on)	Turn on delay time	V_DS = 30 V, V_GS = 10 V, I_DS = 14 A, R_G = 0 Ω		5.2		ns
t_r	Rise time			5.5		ns
t_d(off)	Turn off delay time			15		ns
t_f	Fall time			2		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 14 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse recovery charge	V_DS= 30 V, I_F = 14 A, di/dt = 300 A/μs		54		nC
t_rr	Reverse recovery time	V_DS= 30 V, I_F = 14 A, di/dt = 300 A/μs		40		ns