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ZHCSDN5A July 2014 – April 2024 CSD18535KCS

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

4.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0V, I_D = 250μA	60			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0V, V_DS = 48V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0V, V_GS = 20V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250μA	1.4	1.9	2.4	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5V, I_D = 100A		2.3	2.9	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10V, I_D = 100A		1.6	2.0	mΩ
g_fs	Transconductance	V_DS = 6V, I_D = 100A		263		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0V, V_DS = 30V, ƒ = 1MHz		5090	6620	pF
C_oss	Output Capacitance			890	1150	pF
C_rss	Reverse Transfer Capacitance			24	31	pF
R_G	Series Gate Resistance			0.8	1.6	Ω
Q_g	Gate Charge Total (10V)	V_DS = 30V, I_D = 100A		63	81	nC
Q_gd	Gate Charge Gate-to-Drain			10.4		nC
Q_gs	Gate Charge Gate-to-Source			15.7		nC
Q_g(th)	Gate Charge at V_th			9.4		nC
Q_oss	Output Charge	V_DS = 30V, V_GS = 0V		140		nC
t_d(on)	Turn On Delay Time	V_DS = 30V, V_GS = 10V, I_DS = 100A, R_G = 0Ω		9		ns
t_r	Rise Time			3		ns
t_d(off)	Turn Off Delay Time			19		ns
t_f	Fall Time			3		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 100A, V_GS = 0V		0.9	1.0	V
Q_rr	Reverse Recovery Charge	V_DS= 30V, I_F = 100A, di/dt = 300A/μs		214		nC
t_rr	Reverse Recovery Time	V_DS= 30V, I_F = 100A, di/dt = 300A/μs		63		ns