米6体育平台手机版

ZHCSCO6B June 2014 – April 2017 CSD18540Q5B

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

DNK|8

散热焊盘机械数据 (封装 | 引脚)

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zhcsco6b_oa

5 Specifications

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	60			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 48 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I = 250 μA	1.5	1.9	2.3	V
R_DS(on)	Drain-to-source on resistance	V_GS = 4.5 V, I_D = 28 A		2.6	3.3	mΩ
R_DS(on)	Drain-to-source on resistance	V_GS = 10 V, I_D = 28 A		1.8	2.2	mΩ
g_fs	Transconductance	V_DS = 6 V, I_D = 28 A		116		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 30 V, ƒ = 1 MHz		3250	4230	pF
C_oss	Output capacitance			622	808	pF
C_rss	Reverse transfer capacitance			15	20	pF
R_G	Series gate resistance			0.8	1.6	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 30 V, I_D_D = 28 A		20	26	nC
Q_g	Gate charge total (10 V)			41	53	nC
Q_gd	Gate charge gate-to-drain			6.7		nC
Q_gs	Gate charge gate-to-source			8.8		nC
Q_g(th)	Gate charge at V_th			6.3		nC
Q_oss	Output charge	V_DS = 30 V, V_GS = 0 V		83		nC
t_d(on)	Turnon delay time	V_DS = 30 V, V_GS = 10 V, I_DS = 28 A, R_G = 0 Ω		6		ns
t_r	Rise time			9		ns
t_d(off)	Turnoff delay time			20		ns
t_f	Fall time			3		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 28 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse recovery charge	V_DS= 30 V, I_F = 28 A, di/dt = 300 A/μs		145		nC
t_rr	Reverse recovery time	V_DS= 30 V, I_F = 28 A, di/dt = 300 A/μs		82		ns

5.2 Thermal Information

T_A = 25°C (unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-case thermal resistance⁽¹⁾			0.8	°C/W
R_θJA	Junction-to-ambient thermal resistance⁽¹⁾⁽²⁾			50	°C/W

(1) R_θJC is determined with the device mounted on a 1-in² (6.45-cm²), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in
(3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1-in² (6.45-cm²), 2-oz (0.071-mm) thick Cu.

Max R_θJA = 50°C/W when mounted on 1 in² (6.45 cm²) of
2-oz (0.071-mm) thick Cu.

Max R_θJA = 125°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu.

5.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

	I_D = 28 A	V_DS = 30 V

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 28 A

Figure 8. Normalized On-State Resistance vs Temperature

	Single Pulse, Max R_θJC = 0.8°C/W

Figure 10. Maximum Safe Operating Area

Figure 12. Maximum Drain Current vs Temperature

	V_DS = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching