米6体育平台手机版

ZHCSEU7B March 2016 – June 2024 CSD18542KTT

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

4.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise stated)

Figure 4-1 Transient Thermal Impedance

Figure 4-2 Saturation Characteristics

I_D = 100A

V_DS = 30V

Figure 4-4 Gate Charge

I_D = 250µA

Figure 4-6 Threshold Voltage vs Temperature

I_D = 100A

Figure 4-8 Normalized On-State Resistance vs Temperature

Single pulse, max R_θJC = 0.6°C/W

Figure 4-10 Maximum Safe Operating Area

Figure 4-12 Maximum Drain Current vs Temperature

V_DS = 5V

Figure 4-3 Transfer Characteristics

Figure 4-5 Capacitance

Figure 4-7 On-State Resistance vs Gate-to-Source Voltage

Figure 4-9 Typical Diode Forward Voltage

Figure 4-11 Single Pulse Unclamped Inductive Switching