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ZHCSEU7B March 2016 – June 2024 CSD18542KTT

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

4.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0V, I_D = 250μA	60			V
I_DSS	Drain-to-source leakage current	V_GS = 0V, V_DS = 48V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0V, V_GS = 20V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250μA	1.5	1.8	2.2	V
R_DS(on)	Drain-to-source on resistance	V_GS = 4.5V, I_D = 100A		4.0	5.1	mΩ
R_DS(on)	Drain-to-source on resistance	V_GS = 10V, I_D = 100A		3.3	4.0	mΩ
g_fs	Transconductance	V_DS = 6V, I_D = 100A		198		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0V, V_DS = 30V, ƒ = 1MHz		3900	5070	pF
C_oss	Output capacitance			570	740	pF
C_rss	Reverse transfer capacitance			11	14	pF
R_G	Series gate resistance			1.3	2.6	Ω
Q_g	Gate charge total (4.5V)	V_DS = 30V, I_D = 100A		21	27	nC
Q_g	Gate charge total (10V)			44	57	nC
Q_gd	Gate charge gate-to-drain			6.9		nC
Q_gs	Gate charge gate-to-source			10		nC
Q_g(th)	Gate charge at V_th			7.3		nC
Q_oss	Output charge	V_DS = 30V, V_GS = 0V		63		nC
t_d(on)	Turnon delay time	V_DS = 30V, V_GS = 10V, I_DS = 100A, R_G = 0Ω		6		ns
t_r	Rise time			5		ns
t_d(off)	Turnoff delay time			18		ns
t_f	Fall time			21		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 100A, V_GS = 0V		0.9	1.0	V
Q_rr	Reverse recovery charge	V_DS= 30V, I_F = 100A, di/dt = 300A/μs		148		nC
t_rr	Reverse recovery time	V_DS= 30V, I_F = 100A, di/dt = 300A/μs		53		ns