米6体育平台手机版

ZHCSBX3C December 2013 – May 2024 CSD19506KCS

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

4.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0V, I_D = 250μA	80			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0V, V_DS = 64V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0V, V_GS = 20V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250μA	2.1	2.5	3.2	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 6V, I_D = 100A		2.2	2.8	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10V, I_D = 100A		2.0	2.3	mΩ
g_fs	Transconductance	V_DS = 8V, I_D = 100A		297		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0V, V_DS = 40V, ƒ = 1MHz		9380	12200	pF
C_oss	Output Capacitance			2260	2940	pF
C_rss	Reverse Transfer Capacitance			42	55	pF
R_G	Series Gate Resistance			1.3	2.6	Ω
Q_g	Gate Charge Total (10V)	V_DS = 40V, I_D = 100A		120	156	nC
Q_gd	Gate Charge Gate to Drain			20		nC
Q_gs	Gate Charge Gate to Source			37		nC
Q_g(th)	Gate Charge at V_th			25		nC
Q_oss	Output Charge	V_DS = 40V, V_GS = 0V		345		nC
t_d(on)	Turn On Delay Time	V_DS = 40V, V_GS = 10V, I_DS = 100A, R_G = 0Ω		19		ns
t_r	Rise Time			11		ns
t_d(off)	Turn Off Delay Time			30		ns
t_f	Fall Time			10		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 100A, V_GS = 0V		0.9	1.1	V
Q_rr	Reverse Recovery Charge	V_DS= 40V, I_F = 100A, di/dt = 300A/μs		525		nC
t_rr	Reverse Recovery Time	V_DS= 40V, I_F = 100A, di/dt = 300A/μs		107		ns