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ZHCSBK8D September 2013 – May 2024 CSD19531KCS

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

4.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0V, I_D = 250μA	100			V
I_DSS	Drain-to-source leakage current	V_GS = 0V, V_DS = 80V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0V, V_GS = 20V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250μA	2.2	2.7	3.3	V
R_DS(on)	Drain-to-source on resistance	V_GS = 6V, I_D = 60A		7.3	8.8	mΩ
R_DS(on)	Drain-to-source on resistance	V_GS = 10V, I_D = 60A		6.4	7.7	mΩ
g_fs	Transconductance	V_DS = 10V, I_D = 60A		137		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0V, V_DS = 50V, ƒ = 1MHz		2980	3870	pF
C_oss	Output capacitance			560	728	pF
C_rss	Reverse transfer capacitance			13	17	pF
R_G	Series gate resistance			1.3	2.6	Ω
Q_g	Gate charge total (10V)	V_DS = 50V, I_D = 60A		38	49	nC
Q_gd	Gate charge gate-to-drain			7.5		nC
Q_gs	Gate charge gate-to-source			11.9		nC
Q_g(th)	Gate charge at V_th			7.3		nC
Q_oss	Output charge	V_DS = 50V, V_GS = 0V		98		nC
t_d(on)	Turnon delay time	V_DS = 50V, V_GS = 10V, I_DS = 60A, R_G = 0Ω		8.4		ns
t_r	Rise Time			7.2		ns
t_d(off)	Turnoff delay time			16		ns
t_f	Fall time			4.1		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 60A, V_GS = 0V		0.9	1	V
Q_rr	Reverse recovery charge	V_DS= 50V, I_F = 60A, di/dt = 300A/μs		270		nC
t_rr	Reverse recovery time	V_DS= 50V, I_F = 60A, di/dt = 300A/μs		83		ns