ZHCSBK7B September 2013 – May 2014 CSD19531Q5A
PRODUCTION DATA.
6 器件和文档支持
6.1 Trademarks
NexFET is a trademark of Texas Instruments.
6.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
6.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms and definitions.