米6体育平台手机版

ZHCSCG4 May 2014 CSD19534Q5A

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

DQJ|8
- MPSS010B

散热焊盘机械数据 (封装 | 引脚)

订购信息

zhcscg4_oa

5 Specifications

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = 250 μA	100			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 80 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	2.4	2.8	3.4	V
R_DS(on)	Drain-to-Source On Resistance	V_GS = 6 V, I_D = 10 A		14.1	17.6	mΩ
R_DS(on)	Drain-to-Source On Resistance	V_GS = 10 V, I_D = 10 A		12.6	15.1	mΩ
g_fs	Transconductance	V_DS = 10 V, I_D = 10 A		47		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0 V, V_DS = 50 V, f = 1 MHz		1290	1680	pF
C_oss	Output Capacitance			257	330	pF
C_rss	Reverse Transfer Capacitance			5.7	7.4	pF
R_G	Series Gate Resistance			1.1	2.2	Ω
Q_g	Gate Charge Total (10 V)	V_DS = 50 V, I_D = 10 A		17	22	nC
Q_gd	Gate Charge Gate to Drain			3.2		nC
Q_gs	Gate Charge Gate to Source			5.1		nC
Q_g(th)	Gate Charge at V_th			3.3		nC
Q_oss	Output Charge	V_DS = 50 V, V_GS = 0 V		44		nC
t_d(on)	Turn On Delay Time	V_DS = 50 V, V_GS = 10 V, I_DS = 10 A, R_G = 0 Ω		9		ns
t_r	Rise Time			14		ns
t_d(off)	Turn Off Delay Time			20		ns
t_f	Fall Time			6		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 10 A, V_GS = 0 V		0.8	1.0	V
Q_rr	Reverse Recovery Charge	V_DS= 50 V, I_F = 10 A, di/dt = 300 A/μs		134		nC
t_rr	Reverse Recovery Time	V_DS= 50 V, I_F = 10 A, di/dt = 300 A/μs		53		ns

5.2 Thermal Information

(T_A = 25°C unless otherwise stated)

PARAMETER		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-Case Thermal Resistance ⁽¹⁾			2.0	°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽¹⁾⁽²⁾			50	°C/W

(1) R_θJC is determined with the device mounted on a 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu.

Max R_θJA = 50°C/W when mounted on 1 inch² (6.45 cm²) of 2-oz. (0.071-mm thick) Cu.

Max R_θJA = 115°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu.

5.3 Typical MOSFET Characteristics

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

I_D = 10 A	V_DS = 50 V

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 10 A

Figure 8. Normalized On-State Resistance vs Temperature

Single Pulse	Max R_θJC = 2.0°C/W

Figure 10. Maximum Safe Operating Area

Figure 12. Maximum Drain Current vs Temperature

	V_DS = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching