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ZHCSC17C January 2014 – May 2024 CSD19535KCS

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

4.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0V, I_D = 250μA	100			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0V, V_DS = 80V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0V, V_GS = 20V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250μA	2.2	2.7	3.4	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 6V, I_D = 100A		3.4	4.4	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10V, I_D = 100A		3.1	3.6	mΩ
g_fs	Transconductance	V_DS = 10V, I_D = 100A		274		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0V, V_DS = 50V, ƒ = 1MHz		6100	7930	pF
C_oss	Output Capacitance			1160	1500	pF
C_rss	Reverse Transfer Capacitance			29	38	pF
R_G	Series Gate Resistance			1.4	2.8	Ω
Q_g	Gate Charge Total (10V)	V_DS = 50V, I_D = 100A		78	101	nC
Q_gd	Gate Charge Gate to Drain			13		nC
Q_gs	Gate Charge Gate to Source			25		nC
Q_g(th)	Gate Charge at V_th			16		nC
Q_oss	Output Charge	V_DS = 40V, V_GS = 0V		196		nC
t_d(on)	Turn On Delay Time	V_DS = 50V, V_GS = 10V, I_DS = 100A, R_G = 0Ω		32		ns
t_r	Rise Time			15		ns
t_d(off)	Turn Off Delay Time			60		ns
t_f	Fall Time			5		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 100A, V_GS = 0V		0.9	1.1	V
Q_rr	Reverse Recovery Charge	V_DS= 50V, I_F = 100A, di/dt = 300A/μs		421		nC
t_rr	Reverse Recovery Time	V_DS= 50V, I_F = 100A, di/dt = 300A/μs		89		ns