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ZHCSE28B August 2015 – November 2022 CSD19537Q3

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	100			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 80 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	2.6	3	3.6	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 6 V, I_D = 10 A		13.8	16.6	mΩ
R_DS(on)	Drain-to-source on-resistance	V_GS = 10 V, I_D = 10 A		12.1	14.5	mΩ
g_fs	Transconductance	V_DS = 10 V, I_D = 10 A		45		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 50 V, ƒ = 1 MHz		1290	1680	pF
C_oss	Output capacitance			251	326	pF
C_rss	Reverse transfer capacitance			13.3	17.3	pF
R_G	Series gate resistance			1.2	2.4	Ω
Q_g	Gate charge total (10 V)	V_DS = 50 V, I_D = 10 A		16	21	nC
Q_gd	Gate charge gate-to-drain			2.9		nC
Q_gs	Gate charge gate-to-source			5.5		nC
Q_g(th)	Gate charge at V_th			3.8		nC
Q_oss	Output charge	V_DS = 50 V, V_GS = 0 V		44		nC
t_d(on)	Turn on delay time	V_DS = 50 V, V_GS = 10 V, I_DS = 10 A, R_G = 0 Ω		5		ns
t_r	Rise time			3		ns
t_d(off)	Turn off delay time			10		ns
t_f	Fall time			3		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 10 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse recovery charge	V_DS= 50 V, I_F = 10 A, di/dt = 300 A/μs		134		nC
t_rr	Reverse recovery time	V_DS= 50 V, I_F = 10 A, di/dt = 300 A/μs		36		ns