ZHCSF65B July   2016  – March 2024 CSD19538Q2

PRODUCTION DATA  

  1.   1
  2. 1特性
  3. 2应用
  4.   说明
  5. 3Specifications
    1. 3.1 Electrical Characteristics
    2. 3.2 Thermal Information
    3. 3.3 Typical MOSFET Characteristics
  6. 4Device and Documentation Support
    1. 4.1 第三方米6体育平台手机版_好二三四免责声明
    2. 4.2 接收文档更新通知
    3. 4.3 支持资源
    4. 4.4 Trademarks
    5. 4.5 静电放电警告
    6. 4.6 术语表
  7. 5Revision History
  8. 6Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRICMINTYPMAXUNIT
RθJCJunction-to-case thermal resistance(1)6.2°C/W
RθJAJunction-to-ambient thermal resistance(1)(2)65°C/W
RθJC is determined with the device mounted on a 1in2 (6.45cm2), 2oz (0.071mm) thick Cu pad on a 1.5in × 1.5in (3.81cm × 3.81cm), 0.06in (1.52mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
Device mounted on FR4 material with 1in2 (6.45cm2), 2oz (0.071mm) thick Cu.

CSD19538Q2
Max RθJA = 65°C/W when mounted on 1in2 (6.45cm2) of 2oz (0.071mm) thick Cu.
CSD19538Q2
Max RθJA = 250°C/W when mounted on a minimum pad area of 2oz (0.071mm) thick Cu.