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ZHCSF65B July 2016 – March 2024 CSD19538Q2

PRODUCTION DATA

3.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise stated)

Figure 3-1 Transient Thermal Impedance

Figure 3-2 Saturation Characteristics

	I_D = 5A	V_DS = 50V

Figure 3-4 Gate Charge

	I_D = 250µA

Figure 3-6 Threshold Voltage vs Temperature

	I_D = 5A

Figure 3-8 Normalized On-State Resistance vs Temperature

	Single pulse, max R_θJC = 6.2°C/W

Figure 3-10 Maximum Safe Operating Area

Figure 3-12 Maximum Drain Current vs Temperature

	V_DS = 5V

Figure 3-3 Transfer Characteristics

Figure 3-5 Capacitance

Figure 3-7 On-State Resistance vs Gate-to-Source Voltage

Figure 3-9 Typical Diode Forward Voltage

Figure 3-11 Single Pulse Unclamped Inductive Switching